Datasheet > SBR2516A

SBR2516A

更新时间： 2024-09-15 06:10:11

品牌	Logo	应用领域
CHENG-YI		/
页数	文件大小	规格书
2页	187K
描述
SILICON / GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS

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中文翻译

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数据手册

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SBR2516A 数据手册

SBR 25A/35A SERIES

SSIILLIICCOONN // GGLLAASSSS

PPAASSSSIIVVAATTEEDD TTHHRREEEE PPHHAASSEE

BBRRIIDDGGEE RREECCTTIIFFIIEERRSS

CCHHEENNGG--YYII

ELECTRONIC

REVERSE VOLTAGE -50 to 1600 Volts

FORWARD CURRENT -25/35 Amperes

FEATURES

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

MECHANICAL DATA

Cass: Epoxy Cass With Heat Sink Internally

Mounted in Bridge Encapsulation

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 20 grams (approx.)

Mounting Position:

Bolt Down on Heatsink With Siloicone Thermal

Compound Between Bridge and Mounting Surface

for Maximum Heat Transfer Efficiency

Mounting Torque: 20 in Ibs. Max.

Marking: Type Number

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

VOLTAGE RATINGS

Symbol

Characteristics

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

-00

-01

-02

-04

-06

-08

-10

-12

-14

-16

UNIT

V_RRM

V_RWM

V_R

100

200

400

600

800

1000 1200 1400 1600

Peak Non-Repetitive Reverse Voltage

RMS Reverse Voltage

V_RSM

V_R(RMS)

150

275

140

500

280

725

420

900

560

1100 1300 1500 1700

700

840

980

1120

FORWARD CONDUCTION

Symbol

I_O

Characteristics

MT25

MT35

UNIT

Maximum Average Forward

Rectified Current @T_C=100 C

Non-Repetitive Peak Forward Surge Current

(No Voltage Reapplied t = 8.3ms at 60Hz)

(No Voltage Reapplied t = 10ms at 50Hz)

(100% V_RRMReapplied t = 8.3ms at 60Hz)

(100% V_RRMReapplied t = 10ms at 50Hz)

375

360

314

300

500

475

420

400

I_FSM

I t Rating for Fusing

580

635

410

450

1030

1130

730

(No Voltage Reapplied t = 8.3ms at 60Hz)

(No Voltage Reapplied t = 10ms at 50Hz)

(100% V_RRMReapplied t = 8.3ms at 60Hz)

(100% V_RRMReapplied t = 10ms at 50Hz)

A S

I t

800

Forward Voltage (per element)

V_F

1.26

1.19

@T_J= 25 C, @I_FM= 40A_PKPer single junction

Peark Reverse Current (per leg) @T_J= 25 C

5.0

I_R

At Rated DC Blocking Voltage

@T_J= 125 C

RMS Isolation Voltage from Case to Lead

V_ISO

2500

THERMAL CHARACTERISTICS

Operating Temperature Range

T_J

-40 to +150

Storage Temperature Range

T_STG

Temperature Resistance Junction to Case at

DC Operation per Bridge

K/W

1.42

1.16

Temperature Resistance Case to Heatsing

Monting Surface, Smooth, Flat and Greased

K/W

0.2

中文翻译

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与SBR2516A相关器件

型号	品牌	获取价格	描述	数据表
SBR25-16G	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers
SBR2516GW	HY	获取价格	Glass Passivated 3 Phase Bridge Rectifiers
SBR25-16W	HY	获取价格	Silicon Passivated 3 Phase Bridge Rectifiers
SBR2520	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 20V V(RRM), Silicon, DO-203AA, DO-4, 1
SBR2530	MICROSEMI	获取价格	25 Amp Schottky Rectifier
SBR2530R	MICROSEMI	获取价格	暂无描述
SBR2531DEB	ETC	获取价格	Optoelectronic
SBR2535	MICROSEMI	获取价格	25 Amp Schottky Rectifier
SBR2535R	MICROSEMI	获取价格	25 Amp Schottky Rectifier
SBR2540	MICROSEMI	获取价格	25 Amp Schottky Rectifier

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