Datasheet > SBP840

SBP840

更新时间： 2024-09-17 03:33:31

品牌	Logo	应用领域
DAESAN		/
页数	文件大小	规格书
2页	381K
描述
CURRENT 8.0Amperes VOLTAGE 20 to 100 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SBP840 数据手册

CURRENT 8.0Amperes

VOLTAGE 20 to 100 Volts

SBP820 THRU SBP8100

Features

· Plastic Package has Underwriters Laboratory

Flammability Classification 94V-0

ITO-220A

· Metal silicon junction, majority carrier conduction

· Guard ring for overvoltage protection

· Low power loss, high efficiency

0.2

4.5

0.5

3.2

2.7

· High current capability, Low forward voltage drop

· Single rectifier construction

· High surge capability

· For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

· High temperature soldering guaranteed:

250℃/10 seconds, 0.25" (6.35mm) from case

0.2

1.3

0.2

0.7

0.5

2.4

Mechanical Data

5.08

· Case : JEDEC ITO-220A molded plastic body

· Terminals : Lead solderable per

MIL-STD-750, Method 2026

PIN 1⁺

PIN 2

PIN 1

PIN 2⁺

Case Negative

CASE

CasePositive

· Polarity : As marked

Suffix"R"

· Mounting Position : Any

· Weight : 0.08 ounce, 2.24 grams

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive

load. For capacitive load, derate by 20%)

SBP

820

SBP

830

SBP

840

SBP

850

SBP

860

SBP

880

SBP

Symbols

Units

Volts

8100

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

Maximum DC blocking voltage

VDC

100

Maximum average forward rectified current

(see Fig. 1)

I(AV

)

8.0

Amps

Repetitive peak forward current(square wavr,

20KHZ) at Tc=105℃

IFRM

16.0

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

IFSM

150.0

Amps

Maximum instantaneous forward voltage

at 8.0A (Note 1)

0.65

0.75

0.80

0.85

Volts

Maximum instantaneous reverse

current at rated DC blocking

voltage (Note1)

1.0

5.0

=25℃

=125℃

Typical thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

RθJC

℃/W

℃

-65 to +125

-65 to +150

℃

STG

-65 to +150

Notes:

(1) Pulse test: 300μS pulse width, 1% duty cycle

(2) Thermal resistance from junction to case

中文翻译

下载PDF

与SBP840相关器件

型号	品牌	获取价格	描述	数据表
SBP850	DAESAN	获取价格	CURRENT 8.0Amperes VOLTAGE 20 to 100 Volts
SBP860	DAESAN	获取价格	CURRENT 8.0Amperes VOLTAGE 20 to 100 Volts
SBP880	DAESAN	获取价格	CURRENT 8.0Amperes VOLTAGE 20 to 100 Volts
SBP9989CJ	TI	获取价格	IC,MICROPROCESSOR,16-BIT,I2L,DIP,64PIN,CERAMIC
SBP9989DNJ	TI	获取价格	IC,MICROPROCESSOR,16-BIT,I2L,DIP,64PIN,CERAMIC
SBP9989DNJ	ROCHESTER	获取价格	Microprocessor, CMOS,
SBP9989NFD	TI	获取价格	SBP9989NFD
SBP9989NJ	ROCHESTER	获取价格	Microcontroller, 16-Bit, Bipolar, CDIP64, CERAMIC, DIP-64
SBP9989NJ	TI	获取价格	16-BIT, 4.4MHz, MICROCONTROLLER, CDIP64, CERAMIC, DIP-64
SBP9989NJD	ROCHESTER	获取价格	Microcontroller, CMOS