CURRENT 8.0Amperes
VOLTAGE 20 to 100 Volts
SBP820 THRU SBP8100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
ITO-220A
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
0.2
4.5
0.5
3.2
10
2.7
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed:
250℃/10 seconds, 0.25" (6.35mm) from case
0.2
1.3
0.2
0.7
0.5
2.4
Mechanical Data
5.08
· Case : JEDEC ITO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
PIN 1+
PIN 2
PIN 1
PIN 2+
Case Negative
+
CASE
CASE
CasePositive
· Polarity : As marked
Suffix"R"
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SBP
820
SBP
830
SBP
840
SBP
850
SBP
860
SBP
880
SBP
Symbols
Units
Volts
Volts
Volts
8100
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
V
70
Maximum DC blocking voltage
VDC
100
Maximum average forward rectified current
(see Fig. 1)
I(AV
)
8.0
Amps
Amps
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
IFRM
16.0
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum instantaneous forward voltage
at 8.0A (Note 1)
V
F
0.65
0.75
0.80
0.85
Volts
mA
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
1.0
5.0
T
T
A
A
=25℃
IR
=125℃
15
50
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
RθJC
℃/W
℃
T
J
-65 to +125
-65 to +150
℃
T
STG
-65 to +150
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case