Datasheet > SBL845

SBL845

更新时间： 2024-11-23 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		二极管
页数	文件大小	规格书
2页	82K
描述
肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。

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SBL845 数据手册

SBL830 thru SBL845

Low VF Schottky Barrier Rectifiers

Dimensions TO-220AC

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.580

0.560 0.650

0.380 0.420

0.139 0.161

2.300 0.420

0.100 0.135

0.045 0.070

12.70 14.73

14.23 16.51

9.66 10.66

C(TAB)

3.54

5.85

2.54

1.15

4.08

6.85

3.42

1.77

6.35

0.89

5.33

4.82

0.56

2.49

1.39

A=Anode, C=Cathode, TAB=Cathode

VRRM

VRMS

VDC

0.250

0.025 0.035

0.190 0.210

0.140 0.190

0.015 0.022

0.080 0.115

0.025 0.055

0.64

4.83

3.56

0.38

2.04

0.64

SBL830

SBL835

SBL840

SBL845

24.5

31.5

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

Maximum Average Forward Rectified Current @TC=95^oC

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

IFSM

200

Maximum Forward Voltage At 8.0A DC (Note 1)

0.55

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

0.5

@TJ=100^oC

ROJC

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating Temperature Range

Storage Temperature Range

450

^oC/W

^oC

3.0

-55 to +125

-55 to +150

TSTG

^oC

NOTES: 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

3. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* Case: TO-220AC molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* High surge capacity

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

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