5秒后页面跳转
SBL850(TUBE) PDF预览

SBL850(TUBE)

更新时间: 2024-11-23 13:13:15
品牌 Logo 应用领域
美台 - DIODES 整流二极管
页数 文件大小 规格书
2页 69K
描述
暂无描述

SBL850(TUBE) 数据手册

 浏览型号SBL850(TUBE)的Datasheet PDF文件第2页 
SBL830 - SBL860  
8.0A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
·
·
·
·
Schottky Barrier Chip  
Guard Ring for Transient Protection  
Low Power Loss, High Efficiency  
High Current Capability, Low VF  
High Surge Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
TO-220AC  
L
Dim  
A
B
C
D
E
Min  
14.22  
9.65  
2.54  
5.84  
¾
Max  
15.88  
10.67  
3.43  
B
M
C
D
E
K
A
6.86  
·
Plastic Material: UL Flammability  
Classification Rating 94V-0  
6.35  
Pin 1  
Pin 2  
G
J
12.70  
0.51  
14.73  
1.14  
Mechanical Data  
·
G
K
L
3.53Æ 4.09Æ  
Case: Molded Plastic  
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 2.3 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
J
N
3.56  
1.14  
0.30  
2.03  
4.83  
4.83  
1.40  
0.64  
2.92  
5.33  
·
M
N
P
R
P
·
·
·
·
Pin 1  
Pin 2  
Case  
R
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SBL  
830  
SBL  
835  
SBL  
840  
SBL  
845  
SBL  
850  
SBL  
860  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
24.5  
31.5  
V
A
Average Rectified Output Current  
(Note 1)  
8
@ TC = 95°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
200  
A
VFM  
IRM  
Forward Voltage  
@ IF = 8A, TC = 25°C  
0.55  
0.70  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TC 25°C  
=
0.5  
50  
mA  
@ TC = 100°C  
Cj  
Typical Junction Capacitance (Note 2)  
700  
6.9  
pF  
°C/W  
°C  
RqJC  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.  
DS23044 Rev. C-2  
1 of 2  
SBL830-SBL860  

与SBL850(TUBE)相关器件

型号 品牌 获取价格 描述 数据表
SBL850{TUBE} DIODES

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon
SBL850-A DIODES

获取价格

暂无描述
SBL850-B MCC

获取价格

Rectifier Diode,
SBL850-BP MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, PLASTIC
SBL860 BL Galaxy Electrical

获取价格

SCHOTTKY BARRIER RECTIFIER
SBL860 SIRECTIFIER

获取价格

肖特基势垒二极管Schottky Barrier Diodes,低压降肖特基势垒二极管Lo
SBL860 DIODES

获取价格

8.0A SCHOTTKY BARRIER RECTIFIER
SBL860 MCC

获取价格

8 Amp Schottky Barrier Rectifier 20 to 60 Volts
SBL860(TUBE) DIODES

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon,
SBL860{TUBE} DIODES

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon