Datasheet > SBAS16

SBAS16

更新时间： 2024-12-01 09:34:27

品牌	Logo	应用领域
SECOS		二极管开关
页数	文件大小	规格书
2页	243K
描述
High-Speed Switching Diode

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SBAS16 数据手册

SBAS16

High-Speed

Elektronische Bauelemente

Switching Diode

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

Description

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

* The SBAS16 is designed for high-speed switching

application in hybrid thick and thin-film circuits.

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

* The devices is manufactured by the silicon epitaxial

planar process and packed in a plastic surface

mount package.

Top View

Marking

All Dimension in mm

Absolute Maximum Ratings at TA = 25 ^o

Parameter

Symbol

Ratings

Unit

Reverse Voltage

VRR

Repetitive Reverse Voltage

Forward Current

250

500

IFR

Repetitive Forward Current

IFSM

1000

200

Forward Surge Current (1ms)

Total Power Dissipation

^oC

Operating Junction and Storage Temperature Range

Tj, Tstg

-65~+150

Characteristics at TA = 25к

Characteristic

Symbol

V(BR)

VF(1)

VF(2)

VF(3)

VF(4)

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

IR=100uA

IF=1mA

715

855

1000

1250

IF=10mA

IF=50mA

IF=150mA

VR=75V

Forward Voltage

Reverse Current

Total Capacitance

Reverse Recovery Time

VR=0, f=1MHz

IF=IR=10mA, RL=100Ө measured at IR=1mA

Trr

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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