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SB350-E3 PDF预览

SB350-E3

更新时间: 2024-09-14 15:50:35
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 339K
描述
DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode

SB350-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.68 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:120 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:50 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

SB350-E3 数据手册

 浏览型号SB350-E3的Datasheet PDF文件第2页浏览型号SB350-E3的Datasheet PDF文件第3页浏览型号SB350-E3的Datasheet PDF文件第4页 
SB320 thru SB360  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
3.0 A  
20 V to 60 V  
120 A  
VF  
0.49 V, 0.68 V  
125 °C, 150 °C  
Tj max.  
DO-201AD  
Features  
Mechanical Data  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
Case: DO-201AD  
Epoxy meets UL 94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
Polarity: Color band denotes the cathode end  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in low voltage high frequency inverters, free  
wheeling, dc-to-dc converters, and polarity protection  
applications  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
VRRM  
SB320  
20  
SB330  
30  
SB340  
40  
SB350  
50  
SB360  
60  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
14  
20  
21  
30  
28  
40  
35  
50  
42  
60  
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at  
0.375 (9.5 mm) lead length (See Fig.1)  
IF(AV)  
3.0  
Peak forward surge current 8.3 µs single half sine-  
wave superimposed on rated load  
IFSM  
120  
A
Operating junction temperature range  
Storage temperature range  
TJ  
- 65 to + 125  
- 65 to + 150  
°C  
°C  
TSTG  
- 65 to + 150  
Document Number 88719  
14-Jul-05  
www.vishay.com  
1

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