SB350-T3

更新时间： 2024-11-28 22:43:31

品牌	Logo	应用领域
WTE		整流二极管瞄准线功效
页数	文件大小	规格书
3页	49K
描述
3.0A SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SB350-T3 数据手册

WTE

PO WER SEMICONDUCTORS

SB320 – SB360

3.0A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

Mechanical Data

DO-201AD

Min

Dim

Max

Case: Molded Plastic

25.4

—

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

8.50

9.50

1.30

5.60

1.20

5.0

Weight: 1.2 grams (approx.)

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

SB320

SB330

SB340

SB350

SB360

Unit

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current (Note 1)

@T_L= 95°C

3.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 3.0A

V^FM

I^RM

0.50

0.74

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 2)

C^j

250

K/W

°C

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB320 – SB360

1 of 3

12 3

中文翻译

下载PDF

与SB350-T3相关器件

型号	品牌	获取价格	描述	数据表
SB350-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, ROHS COM
SB350-TB	WTE	获取价格	3.0A SCHOTTKY BARRIER RECTIFIER
SB350-TB-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, ROHS COM
SB350T-G	COMCHIP	获取价格	Leaded Schottky Barrier Rectifiers
SB351	TSC	获取价格	High Current 15, 25, 35 AMPS. Single Phase Bridge Rectifiers
SB351	SURGE	获取价格	Bridge Rectifier Diode, 1 Phase, 35A, Silicon
SB3510	SURGE	获取价格	35.0 AMP SILICON BRIDGE
SB3510	TSC	获取价格	High Current 15, 25, 35 AMPS. Single Phase Bridge Rectifiers
SB3510	RFE	获取价格	Bridge Rectifier Diode, 35A, 1000V V(RRM),
SB3510G	TSC	获取价格	High Current 15, 25, 35 AMPS. Single Phase Glass Passivated Bridge Rectifiers