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S34ML04G2

更新时间： 2024-11-26 01:20:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
76页 7372K
描述
1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded

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S34ML04G2 数据手册

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S34ML01G2  
S34ML02G2  
S34ML04G2  
1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC  
NAND Flash Memory for Embedded  
Distinctive Characteristics  
Density  
– Device Size  
– 1 Gb: 1 plane per device or 128 Mbyte  
– 2 Gb: 2 planes per device or 256 Mbyte  
– 4 Gb: 2 planes per device or 512 Mbyte  
– 1 Gb / 2 Gb / 4 Gb  
Architecture  
– Input / Output Bus Width: 8 bits / 16 bits  
– Page size:  
NAND Flash interface  
– Open NAND Flash Interface (ONFI) 1.0 compliant  
– Address, Data, and Commands multiplexed  
– ×8:  
1 Gb: (2048 + 64) bytes; 64-byte spare area  
2 Gb / 4 Gb: (2048 + 128) bytes; 128-byte spare area  
– ×16:  
Supply Voltage  
– 3.3-V device: V = 2.7 V ~ 3.6 V  
CC  
1 Gb: (1024 + 32) words; 32-word spare area  
2 Gb / 4 Gb (1024 + 64) words; 64-word spare area  
– Block size: 64 Pages  
Security  
– One Time Programmable (OTP) area  
– Serial number (unique ID) (Contact factory for support)  
– Hardware program/erase disabled during power transition  
– ×8:  
1 Gb: 128 KB+ 4 KB  
Additional features  
2 Gb / 4 Gb: 128 KB + 8 KB  
– ×16  
1 Gb: 64k + 2k words  
– 2 Gb and 4 Gb parts support Multiplane Program and Erase  
commands  
2 Gb / 4 Gb: 64k + 4k words  
– Plane size  
– Supports Copy Back Program  
– 2 Gb and 4 Gb parts support Multiplane Copy Back Program  
– Supports Read Cache  
– ×8  
1 Gb: 1024 blocks per plane or (128 MB + 4 MB  
2 Gb: 1024 blocks per plane or (128 MB + 8 MB  
4 Gb: 2048 blocks per plane or (256 MB + 16 MB  
– ×16  
1 Gb: 1024 blocks per plane or (64M + 2M) words  
2 Gb: 1024 Blocks per Plane or (64M + 4M) words  
4 Gb: 2048 Blocks per Plane or (128M + 8M) words  
Electronic signature  
– Manufacturer ID: 01h  
Operating temperature  
– Industrial: –40 °C to 85 °C  
– Industrial Plus: –40 °C to 105 °C  
Performance  
Page Read / Program  
Reliability  
– Random access: 25 µs (Max) (S34ML01G2)  
– Random access: 30 µs (Max) (S34ML02G2, S34ML04G2)  
– Sequential access: 25 ns (Min)  
– 100,000 Program / Erase cycles (Typ)  
(with 4-bit ECC per 528 bytes (×8) or 264 words (×16))  
– 10 Year Data retention (Typ)  
– For one plane structure (1-Gb density)  
– Program time / Multiplane Program time: 300 µs (Typ)  
– Block zero is valid and will be valid for at least 1,000 program-  
erase cycles with ECC  
Block Erase (S34ML01G2)  
– Block Erase time: 3 ms (Typ)  
– For two plane structures (2-Gb and 4-Gb densities)  
– Blocks zero and one are valid and will be valid for at least 1,000  
program-erase cycles with ECC  
Block Erase / Multiplane Erase (S34ML02G2, S34ML04G2)  
– Block Erase time: 3.5 ms (Typ)  
Package options  
– Pb-free and low halogen  
– 48-Pin TSOP 12 × 20 × 1.2 mm  
– 63-Ball BGA 9 × 11 × 1 mm  
– 67-Ball BGA 8 × 6.5 × 1 mm (S34ML01G2, S34ML02G2)  
Cypress Semiconductor Corporation  
Document Number: 002-00499 Rev. *N  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised August 30, 2016  
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