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S34MS04G1 PDF预览

S34MS04G1

更新时间： 2024-11-22 01:11:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
71页 1807K
描述
1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded

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S34MS04G1 数据手册

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S34MS01G1  
S34MS02G1  
S34MS04G1  
1-bit ECC, x8 and x16 I/O, 1.8V VCC  
SLC NAND Flash for Embedded  
Distinctive Characteristics  
Density  
NAND flash interface  
– 1 Gb / 2 Gb / 4 Gb  
– Open NAND Flash Interface (ONFI) 1.0 compliant  
– Address, Data, and Commands multiplexed  
Supply voltage  
Architecture  
– Input / Output Bus Width: 8 bits / 16 bits  
– Page size:  
– ×8 = 2112 (2048 + 64) bytes; 64 bytes is spare area  
– ×16 = 1056 (1024 + 32) words; 32 words is spare area  
– Block size: 64 pages  
– 1.8-V device: Vcc = 1.7 V ~ 1.95 V  
Security  
– One Time Programmable (OTP) area  
– Hardware program/erase disabled during power transition  
– ×8 = 128 KB + 4 KB  
Additional features  
– ×16 = 64k + 2k words  
– 2 Gb and 4 Gb parts support Multiplane Program and Erase  
commands  
– Plane size:  
– 1 Gb / 2 Gb: 1024 Blocks per Plane  
×8 = 128 MB + 4 MB  
– Supports Copy Back Program  
– 2 Gb and 4 Gb parts support Multiplane Copy Back Program  
– Supports Read Cache  
×16 = 64M + 2M words  
– 4 Gb: 2048 blocks per plane  
×8 = 256 MB + 8 MB  
Electronic signature  
– Manufacturer ID: 01h  
×16 = 128M + 4M words  
– Device size:  
Operating temperature  
– Industrial: –40 °C to 85 °C  
– Industrial Plus: –40 °C to 105 °C  
– 1 Gb: 1 Plane per Device or 128 MB  
– 2 Gb: 2 Planes per Device or 256 MB  
– 4 Gb: 2 Planes per Device or 512 MB  
Performance  
Page Read / Program  
Reliability  
– Random access: 25 µs (Max)  
– 100,000 Program / Erase cycles (Typ)  
(with 1-bit ECC per 528 bytes (×8) or 264 words (×16))  
– 10-year Data retention (Typ)  
– Sequential access: 45 ns (Min)  
– Program time / Multiplane Program time: 250 µs (Typ)  
Block Erase (S34MS01G1)  
– For one plane structure (1-Gb density)  
– Block zero is valid and will be valid for at least 1,000 program-  
erase cycles with ECC  
– Block Erase time: 2.0 ms (Typ)  
Block Erase / Multiplane Erase (S34MS02G1, S34MS04G1)  
– Block Erase time: 3.5 ms (Typ)  
– For two plane structures (2-Gb and 4-Gb densities)  
– Blocks zero and one are valid and will be valid for at least  
1,000 program-erase cycles with ECC  
Package options  
– Pb-free and Low Halogen  
– 48-Pin TSOP 12 x 20 x 1.2 mm  
– 63-Ball BGA 9 x 11 x 1 mm  
Cypress Semiconductor Corporation  
Document Number: 002-00330 Rev. *K  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised April 20, 2017  
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