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S34MS04G204BHI010 PDF预览

S34MS04G204BHI010

更新时间： 2024-11-21 15:50:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路
页数 文件大小 规格书
74页 2226K
描述
Flash, 256MX16, 45ns, PBGA63, BGA-63

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S34MS04G204BHI010 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：BGA-63Reach Compliance Code：compliant
HTS代码：8542.32.00.51风险等级：4.35
最长访问时间：45 ns命令用户界面：YES
数据轮询：NOJESD-30 代码：R-PBGA-B63
长度：11 mm内存密度：4294967296 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3功能数量：1
部门数/规模：4K端子数量：63
字数：268435456 words字数代码：256000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256MX16
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装等效代码：BGA64,10X12,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH页面大小：1K words
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：1.8 V编程电压：1.8 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1 mm部门规模：64K
最大待机电流：0.00005 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：NO
类型：SLC NAND TYPE宽度：9 mm
Base Number Matches：1

S34MS04G204BHI010 数据手册

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S34MS01G2  
S34MS02G2  
S34MS04G2  
1 Gbit/2 Gbit/4 Gbit  
SLC NAND Flash for Embedded  
Distinctive Characteristics  
Density  
– Device size:  
– 1 Gb / 2 Gb / 4 Gb  
– 1 Gb: 1 plane per device or 128 MB  
– 2 Gb: 2 planes per device or 256 MB  
– 4 Gb: 2 planes per device or 512 MB  
NAND flash interface  
Architecture  
– Input / Output Bus Width: 8 bits / 16 bits  
– Page size:  
– x8  
– Open NAND Flash Interface (ONFI) 1.0 compliant  
– Address, Data, and Commands multiplexed  
Supply voltage  
– 1.8 V device: VCC = 1.7 V ~ 1.95 V  
Security  
1 Gb: (2048 + 64) bytes; 64-byte spare area  
2 Gb / 4 Gb: (2048 + 128) bytes; 128-byte spare area  
– x16  
1 Gb: (1024 + 32) words; 32-word spare area  
2 Gb / 4Gb: (1024 + 64) words; 64-word spare area  
– Block size: 64 Pages  
– One Time Programmable (OTP) area  
– Serial number (unique ID) (Contact factory for support)  
– Hardware program/erase disabled during power transition  
– x8  
1 Gb: 128 KB + 4 KB  
2 Gb / 4 Gb: 128 KB + 8 KB  
– x16  
Additional features  
– 2 Gb and 4 Gb parts support Multiplane Program and  
Erase commands  
1 Gb: (64k + 2k) words  
– Supports Copy Back Program  
– 2 Gb and 4 Gb parts support Multiplane Copy Back  
Program  
2 Gb / 4 Gb: (64k + 4k) words  
– Plane size:  
– x8  
– Supports Read Cache  
1 Gb: 1024 Blocks per Plane or (128 MB + 4 MB)  
2 Gb: 1024 Blocks per Plane or (128 MB + 8 MB)  
4 Gb: 2048 Blocks per Plane or (256 MB + 16 MB)  
– x16  
1 Gb: 1024 Blocks per Plane or (64M + 2M) words  
2 Gb: 1024 blocks per plane or (64M + 4M) words  
4 Gb: 2048 blocks per plane or (128M + 8M) words  
Electronic signature  
– Manufacturer ID: 01h  
Operating temperature  
– Industrial: 40 °C to 85 °C  
– Industrial Plus: 40 °C to 105 °C  
Performance  
Page Read / Program  
Reliability  
– Random access: 25 µs (Max) (S34MS01G2)  
– Random access: 30 µs (Max) (S34MS02G2, S34ML04G2)  
– Sequential access: 45 ns (Min)  
– 100,000 Program / Erase cycles (Typ)  
(with 4-bit ECC per 528 bytes (x8) or 264 words (x16))  
– 10-year Data retention (Typ)  
– For one plane structure (1-Gb density)  
– Block zero is valid and will be valid for at least 1,000  
program-erase cycles with ECC  
– Program time / Multiplane Program time: 300 µs (Typ)  
Block Erase (S34MS01G2)  
– Block Erase time: 3.0 ms (Typ)  
– For two plane structures (2-Gb and 4-Gb densities)  
– Blocks zero and one are valid and will be valid for at  
least 1,000 program-erase cycles with ECC  
Block Erase / Multiplane Erase (S34MS02G2, S34MS04G2)  
– Block Erase time: 3.5 ms (Typ)  
Package options  
– Pb-free and Low Halogen  
– 48-Pin TSOP 12 20 1.2 mm  
– 63-Ball BGA 9 11 1 mm  
– 67-Ball BGA 8 6.5 1 mm (S34MS01G2, S34MS02G2)  
Cypress Semiconductor Corporation  
Document Number: 002-03238 Rev. *E  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised June 09, 2017  
 
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