是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | VFBGA, BGA64,10X12,32 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.51 | 风险等级: | 7.64 |
Is Samacsys: | N | 最长访问时间: | 45 ns |
命令用户界面: | YES | 数据轮询: | NO |
JESD-30 代码: | R-PBGA-B63 | 长度: | 11 mm |
内存密度: | 4294967296 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 湿度敏感等级: | 3 |
功能数量: | 1 | 部门数/规模: | 4K |
端子数量: | 63 | 字数: | 536870912 words |
字数代码: | 512000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512MX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装等效代码: | BGA64,10X12,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
页面大小: | 2K words | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 1.8 V |
编程电压: | 1.8 V | 认证状态: | Not Qualified |
就绪/忙碌: | YES | 座面最大高度: | 1 mm |
部门规模: | 128K | 最大待机电流: | 0.00005 A |
子类别: | Flash Memories | 最大压摆率: | 0.03 mA |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
切换位: | NO | 类型: | NAND TYPE |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S34MS04G204BHI010 | CYPRESS |
获取价格 |
Flash, 256MX16, 45ns, PBGA63, BGA-63 | |
S34MS-1 | CYPRESS |
获取价格 |
1-Bit ECC | |
S34Q | YANGJIE |
获取价格 |
SOD-123FL | |
S35 | MICROSEMI |
获取价格 |
Silicon Power Rectifier | |
S35 | NKK |
获取价格 |
Medium/High Capacity Standard Size Toggles | |
S35 | YANGJIE |
获取价格 |
SOD-123FL | |
S-35 | MEANWELL |
获取价格 |
35W Single Output Switching Power Supply | |
S-35.36KOHM0.01% | VISHAY |
获取价格 |
Fixed Resistor, Wire Wound, 3W, 5360ohm, 150V, 0.01% +/-Tol, -20,20ppm/Cel, Surface Mount, | |
S-35.36OHM0.01% | VISHAY |
获取价格 |
Fixed Resistor, Wire Wound, 3W, 5.36ohm, 150V, 0.01% +/-Tol, -50,50ppm/Cel, Surface Mount, | |
S-35.49KOHM0.01% | VISHAY |
获取价格 |
Fixed Resistor, Wire Wound, 3W, 5490ohm, 150V, 0.01% +/-Tol, -20,20ppm/Cel, Surface Mount, |