品牌 | Logo | 应用领域 |
THINKISEMI | 二极管 | |
页数 | 文件大小 | 规格书 |
2页 | 560K | |
描述 | ||
30.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers |
生命周期: | Contact Manufacturer | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.76 | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 0.85 V | 最大非重复峰值正向电流: | 275 A |
最高工作温度: | 125 °C | 最大输出电流: | 30 A |
最大重复峰值反向电压: | 100 V | 子类别: | Rectifier Diodes |
表面贴装: | NO | 技术: | SCHOTTKY |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S30D100C | WON-TOP |
获取价格 |
Powerpack | |
S30D100PT | CTC |
获取价格 |
Schottky Barrier Rectifier | |
S30D10A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 280000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E | |
S30D10A0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A | |
S30D10B0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E | |
S30D10B0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E | |
S30D10B0FPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A | |
S30D10B0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A | |
S30D12B0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E | |
S30D12B0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E |