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S30D100C PDF预览

S30D100C

更新时间： 2023-12-06 20:02:59
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 44K
描述
Powerpack

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S30D100C 数据手册

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®
S30D30C – S30D100C  
30A DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
H
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
TO-3P  
Dim  
A
B
C
D
E
Min  
1.85  
4.70  
—
Max  
2.15  
5.30  
23.00  
—
S
R
L
J
K
19.00  
2.80  
0.45  
—
PIN1  
2
3
3.20  
0.85  
16.20  
2.70  
3.65 Ø  
4.50  
5.65  
1.40  
2.50  
12.70  
6.00  
P
G
H
J
1.70  
3.15 Ø  
—
Mechanical Data  
N
K
L
Case: TO-3P, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-750, Method 2026  
Polarity: See Diagram  
Weight: 5.6 grams (approx.)  
M
N
P
5.25  
1.10  
—
M
A
R
S
11.70  
5.00  
B
All Dimensions in mm  
Mounting Position: Any  
Mounting Torque: 1.2 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
C
PIN 1  
PIN 3  
PIN 2  
Case  
G
D
E
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
S30D S30D S30D S30D S30D S30D S30D S30D  
Characteristic  
Symbol  
Unit  
30C  
35C  
40C  
45C  
50C  
60C  
80C 100C  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
30  
35  
40  
45  
50  
60  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
21  
25  
28  
32  
35  
42  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
30  
15  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
VFM  
250  
A
V
Forward Voltage per diode @IF = 15A, TJ = 25°C  
@IF = 15A, TJ = 125°C  
0.55  
0.50  
0.75  
0.65  
0.85  
0.75  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
1.0  
20  
IRM  
CJ  
mA  
pF  
Typical Junction Capacitance (Note 1)  
750  
500  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
40  
1.4  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
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 		Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
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 		Silicon Controlled Rectifier, 550A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209A

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