Datasheet > S30D100PT

S30D100PT

更新时间： 2024-02-08 21:03:22

品牌	Logo	应用领域
CTC		/
页数	文件大小	规格书
3页	693K
描述
Schottky Barrier Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

S30D100PT 数据手册

S30D100PT

Schottky Barrier Rectifier

FEATURES

• Low power loss, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Excellent high temperature stability

• Trench MOS Schottky technology

• Suffix “H” indicates halogen free parts

MECHANICAL DATA

• Case: TO-3P

• Terminals: Pure tin plated, lead free

• Polarity: As marked

• Weight: Approximated 1.86 grams

Primary Characteristic

I_O

2X15A

100V

V_RRM

I_FSM

275A

V_F@15A, T_J=125°C

T_Jmax

0.75V

150°C

Maximum Ratings Ta=25°C unless otherwise specified

Characteristics

Maximum Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

Maximum DC Blocking Voltage

RMS Reverse Voltage

Symbol

Value

Unit

V_RRM

V_RWM

V_DC

100

V_RMS

Forward Voltage Drop

I_F=15A, T_J=25°C

I_F=15A, T_J=125°C

V_F

0.85

0.75

Maximum Reverse Current at Rated V_RRM

T_J=25°C

T_J=125°C

I_R

0.1

Maximum Average Forward Rectified Current

Total device

Per diode

I_O

Peak Forward Surge Current,

8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

I_FSM

275

Operating Temperature Range

Storage Temperature Range

T_J

T_STG

θ_JC

-65 to +150

1.5

°C

Maximum Thermal Resistance

°C/W

θ_JA

Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle

V0.0 2012-06

http://ctc-semicon.com

P1/3

12 3

中文翻译

下载PDF

与S30D100PT相关器件

型号	品牌	获取价格	描述	数据表
S30D10A0	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 280000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
S30D10A0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
S30D10B0	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
S30D10B0F	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
S30D10B0FPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
S30D10B0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
S30D12B0	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
S30D12B0F	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
S30D12B0FPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209A
S30D12B0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 550A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209A