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S25FL208K0RMFI011 PDF预览

S25FL208K0RMFI011

更新时间: 2024-09-20 19:27:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟光电二极管内存集成电路
页数 文件大小 规格书
33页 1469K
描述
Flash, 1MX8, PDSO8, SOIC-8

S25FL208K0RMFI011 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SOP, SOP8,.3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.74最大时钟频率 (fCLK):76 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:S-PDSO-G8长度:5.283 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:SQUARE封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:2.159 mm
串行总线类型:SPI最大待机电流:0.000032 A
子类别:Flash Memories最大压摆率:0.025 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:5.283 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

S25FL208K0RMFI011 数据手册

 浏览型号S25FL208K0RMFI011的Datasheet PDF文件第2页浏览型号S25FL208K0RMFI011的Datasheet PDF文件第3页浏览型号S25FL208K0RMFI011的Datasheet PDF文件第4页浏览型号S25FL208K0RMFI011的Datasheet PDF文件第5页浏览型号S25FL208K0RMFI011的Datasheet PDF文件第6页浏览型号S25FL208K0RMFI011的Datasheet PDF文件第7页 
S25FL208K  
8-Mbit 3.0V Serial Flash Memory with  
Uniform 4 kB Sectors  
Distinctive Features  
Single power supply operation  
– Full voltage range: 2.7 to 3.6V  
Flexible Architecture with 4 kB Sectors  
– Sector Erase (4 kB)  
– Block Erase (64 kB)  
8-Mbit Serial Flash  
– Page Program up to 256 bytes  
– 8-Mbit/1024 kbyte/4096 pages  
– 256 bytes per programmable page  
– Uniform 4-kbyte Sectors/64-kbyte Blocks  
Standard and Dual  
– 100k erase/program cycles typical  
– 20-year data retention typical  
Software and Hardware Write Protection  
– Write Protect all or portion of memory via software  
– Enable/Disable protection with WP# pin  
High Performance Program/Erase Speed  
– Page program time: 1.5 ms typical  
– Sector erase time (4 kB): 50 ms typical  
– Block erase time (64 kB): 500 ms typical  
– Chip erase time: 7 seconds typical  
Package Options  
– Standard SPI: SCK, CS#, SI, SO, WP#, HOLD#  
– Dual SPI: SCK, CS#, SI/IO0, SO, WP#, HOLD#  
– Fast Read Dual Output instruction  
– Auto-increment Read capability  
High Performance  
– FAST READ (Serial): 76 MHz clock rate  
– DUAL OUTPUT READ: 76 MHz clock rate  
Low Power Consumption  
– 8-pin SOIC 150/208-mil  
– 12 mA typical active current  
– All Pb-free packages are RoHS compliant  
– 15 µA typical standby current  
General Description  
The S25FL208K (8-Mbit, 1024-kbyte) Serial Flash memory, with advanced write protection mechanisms. The S25FL208K supports  
the standard Serial Peripheral Interface (SPI), and a high performance Dual output using SPI pins: Serial Clock, Chip Select, Serial  
SI/IO0, SO, WP# and HOLD#. SPI clock frequencies of up to 76 MHz are supported along with a clock rate of  
76 MHz for Dual Output Read.  
The S25FL208K array is organized into 4,096 programmable pages of 256 bytes each. Up to 256 bytes can be programmed at a  
time. Pages can be erased in groups of 16 (4-kB Sector Erase)Document Number: 002-00721 Rev. *HDocument Number: 002-  
00721 Rev. *H, groups of 256 (64-kB Block Erase) or the entire chip (Chip Erase). The S25FL208K has 256 erasable sectors and 16  
erasable blocks. The small 4 kB sectors allow for greater flexibility in applications that require data and parameter storage.  
A Hold pin, Write Protect Pin and programmable write protection provide further control flexibility. Additionally, the S25FL208K  
device supports JEDEC standard manufacturer and device identification.  
Cypress Semiconductor Corporation  
Document Number: 002-00721 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 30, 2017  
 
 

S25FL208K0RMFI011 替代型号

型号 品牌 替代类型 描述 数据表
S25FL208K0RMFI011 SPANSION

完全替代

Flash, 1MX8, PDSO8, SOIC-8
S25FL208K0RMFI013 CYPRESS

完全替代

Flash, 1MX8, PDSO8, SOIC-8

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