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S25FL128P0XMFI001 PDF预览

S25FL128P0XMFI001

更新时间： 2024-09-19 19:50:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟光电二极管内存集成电路
页数 文件大小 规格书
44页 1110K
描述
Flash, 16MX8, PDSO16, SOP-16

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S25FL128P0XMFI001 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：SOP-16Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.46Is Samacsys：N
最大时钟频率 (fCLK)：104 MHz数据保留时间-最小值：20
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDSO-G16
JESD-609代码：e3长度：10.3 mm
内存密度：134217728 bit内存集成电路类型：FLASH
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：16
字数：16777216 words字数代码：16000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：16MX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP16,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
峰值回流温度（摄氏度）：260电源：3/3.3 V
编程电压：3 V认证状态：Not Qualified
座面最大高度：2.65 mm串行总线类型：SPI
最大待机电流：0.00002 A子类别：Flash Memories
最大压摆率：0.026 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
类型：NOR TYPE宽度：7.5 mm
写保护：HARDWARE/SOFTWAREBase Number Matches：1

S25FL128P0XMFI001 数据手册

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S25FL128P  
128-Mbit, 3.0 V Flash Memory  
This product is not recommended for new and current designs. For new and current designs, S25FL128S supersedes  
S25FL128P. This is the factory-recommended migration path. Please refer to the S25FL128S data sheet for  
specifications and ordering information.  
Distinctive Characteristics  
Process Technology  
Architectural Advantages  
Single power supply operation  
– Manufactured on 0.09 µm MirrorBit® process technology  
Package Option  
– Full voltage range: 2.7V to 3.6V read and program operations  
Memory Architecture  
– Industry Standard Pinouts  
– 16-pin SO package (300 mils)  
– 8-Contact WSON Package (6 x 8 mm)  
– 128Mb uniform 256 KB sector product  
– 128Mb uniform 64 KB sector product  
Program  
Performance Characteristics  
Speed  
– 104 MHz clock rate (maximum)  
Power Saving Standby Mode  
– Standby Mode 200 µA (max)  
– Deep Power Down Mode 3 µA (typical)  
– Page Program (up to 256 bytes) in 1.5 ms (typical)  
– Faster program time in Accelerated Programming mode  
(8.5 V–9.5 V on #WP/ACC) in 1.2 ms (typical)  
Erase  
– 2 s typical 256 KB sector erase time  
– 0.5 s typical 64 KB sector erase time  
– 128 s typical bulk erase time  
Memory Protection Features  
Memory Protection  
– Sector erase (SE) command (D8h) for 256 KB sectors; (20h or  
D8h) for 64KB sectors  
– Bulk erase command (C7h) for 256 KB sectors; (60h or C7h) for  
64KB sectors  
– WP#/ACC pin works in conjunction with Status Register Bits to  
protect specified memory areas  
– 256 KB uniform sector product:  
Cycling Endurance  
– 100,000 cycles per sector typical  
Data Retention  
Status Register Block Protection bits (BP2, BP1, BP0) in status  
register configure parts of memory as read-only.  
– 64KB uniform sector product:  
Status Register Block Protection bits (BP3, BP2, BP1, BP0) in  
status register configure parts of memory as read-only  
– 20 years typical  
Device ID  
– RDID (9Fh), READ_ID (90h) and RES (ABh) commands to read  
manufacturer and device ID information  
– RES command one-byte electronic signature for backward  
compatibility  
Software Features  
– SPI Bus Compatible Serial Interface  
Hardware Features  
x8 Parallel Programming Mode (for 16-pin SO package only)  
General Description  
The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of  
256 KB memory, or 256 sectors of 64 KB memory.  
The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be  
programmed in-system with the standard system 3.0 volt VCC supply.  
The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase  
and Bulk Erase commands.  
Each device requires only a 3.0 volt power supply (2.7V to 3.6V) for both read and write functions. Internally generated and  
regulated voltages are provided for the program operations. This device requires a high voltage supply to WP#/ACC pin for the  
Accelerated Programming mode.  
Cypress Semiconductor Corporation  
Document Number: 002-00646 Rev. *M  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised April 27, 2017  
 
 
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S25FL128P0XMFI001 替代型号

型号 品牌 替代类型 描述 数据表
S25FL128P0XMFI001 SPANSION

完全替代

 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus
S25FL128SAGMFI001 CYPRESS

类似代替

 Flash, 32MX4, PDSO16, SOIC-16

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S25FL128P0XMFI003 SPANSION

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 		128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus
S25FL128P0XMFI010 SPANSION

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 		Flash, 16MX8, PDSO16, 0.300 INCH, LEAD FREE, PLASTIC, MS-013AA, SOP-16
S25FL128P0XMFI011 SPANSION

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 		128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus
S25FL128P0XMFI011 CYPRESS

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 		Flash, 16MX8, PDSO16, SOP-16
S25FL128P0XMFI013 SPANSION

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 		128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus
S25FL128P0XMFI013 CYPRESS

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 		Flash, 16MX8, PDSO16, SOP-16
S25FL128P0XNFI001 SPANSION

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 		128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus
S25FL128P0XNFI001 CYPRESS

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 		Flash, 16MX8, WSON-8
S25FL128P0XNFI003 CYPRESS

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 		Flash, 16MX8, WSON-8

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