5秒后页面跳转
捷配首页

Datasheet > S25FL128P0XNFI011
S25FL128P0XNFI011 PDF预览

S25FL128P0XNFI011

更新时间： 2024-09-19 19:50:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟内存集成电路
页数 文件大小 规格书
44页 1110K
描述
Flash, 16MX8, WSON-8

阅读下载

中文翻译

获取价格

S25FL128P0XNFI011 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：WSON-8Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.49最大时钟频率 (fCLK)：104 MHz
数据保留时间-最小值：20耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-XDSO-N8JESD-609代码：e3
长度：8 mm内存密度：134217728 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：8字数：16777216 words
字数代码：16000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX8封装主体材料：UNSPECIFIED
封装代码：HVSON封装等效代码：SOLCC8,.3
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified座面最大高度：0.85 mm
串行总线类型：SPI最大待机电流：0.00002 A
子类别：Flash Memories最大压摆率：0.026 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn)端子形式：NO LEAD
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：6 mm写保护：HARDWARE/SOFTWARE
Base Number Matches：1

S25FL128P0XNFI011 数据手册

 浏览型号S25FL128P0XNFI011的Datasheet PDF文件第2页浏览型号S25FL128P0XNFI011的Datasheet PDF文件第3页浏览型号S25FL128P0XNFI011的Datasheet PDF文件第4页浏览型号S25FL128P0XNFI011的Datasheet PDF文件第5页浏览型号S25FL128P0XNFI011的Datasheet PDF文件第6页浏览型号S25FL128P0XNFI011的Datasheet PDF文件第7页 
S25FL128P  
128-Mbit, 3.0 V Flash Memory  
This product is not recommended for new and current designs. For new and current designs, S25FL128S supersedes  
S25FL128P. This is the factory-recommended migration path. Please refer to the S25FL128S data sheet for  
specifications and ordering information.  
Distinctive Characteristics  
Process Technology  
Architectural Advantages  
Single power supply operation  
– Manufactured on 0.09 µm MirrorBit® process technology  
Package Option  
– Full voltage range: 2.7V to 3.6V read and program operations  
Memory Architecture  
– Industry Standard Pinouts  
– 16-pin SO package (300 mils)  
– 8-Contact WSON Package (6 x 8 mm)  
– 128Mb uniform 256 KB sector product  
– 128Mb uniform 64 KB sector product  
Program  
Performance Characteristics  
Speed  
– 104 MHz clock rate (maximum)  
Power Saving Standby Mode  
– Standby Mode 200 µA (max)  
– Deep Power Down Mode 3 µA (typical)  
– Page Program (up to 256 bytes) in 1.5 ms (typical)  
– Faster program time in Accelerated Programming mode  
(8.5 V–9.5 V on #WP/ACC) in 1.2 ms (typical)  
Erase  
– 2 s typical 256 KB sector erase time  
– 0.5 s typical 64 KB sector erase time  
– 128 s typical bulk erase time  
Memory Protection Features  
Memory Protection  
– Sector erase (SE) command (D8h) for 256 KB sectors; (20h or  
D8h) for 64KB sectors  
– Bulk erase command (C7h) for 256 KB sectors; (60h or C7h) for  
64KB sectors  
– WP#/ACC pin works in conjunction with Status Register Bits to  
protect specified memory areas  
– 256 KB uniform sector product:  
Cycling Endurance  
– 100,000 cycles per sector typical  
Data Retention  
Status Register Block Protection bits (BP2, BP1, BP0) in status  
register configure parts of memory as read-only.  
– 64KB uniform sector product:  
Status Register Block Protection bits (BP3, BP2, BP1, BP0) in  
status register configure parts of memory as read-only  
– 20 years typical  
Device ID  
– RDID (9Fh), READ_ID (90h) and RES (ABh) commands to read  
manufacturer and device ID information  
– RES command one-byte electronic signature for backward  
compatibility  
Software Features  
– SPI Bus Compatible Serial Interface  
Hardware Features  
x8 Parallel Programming Mode (for 16-pin SO package only)  
General Description  
The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of  
256 KB memory, or 256 sectors of 64 KB memory.  
The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be  
programmed in-system with the standard system 3.0 volt VCC supply.  
The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase  
and Bulk Erase commands.  
Each device requires only a 3.0 volt power supply (2.7V to 3.6V) for both read and write functions. Internally generated and  
regulated voltages are provided for the program operations. This device requires a high voltage supply to WP#/ACC pin for the  
Accelerated Programming mode.  
Cypress Semiconductor Corporation  
Document Number: 002-00646 Rev. *M  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised April 27, 2017  
 
 
1234567...44

中文翻译

下载PDF

S25FL128P0XNFI011 替代型号

型号 品牌 替代类型 描述 数据表
S25FL128P0XNFI003 CYPRESS

完全替代

 Flash, 16MX8, WSON-8
W25Q128BVEIG WINBOND

类似代替

 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

与S25FL128P0XNFI011相关器件

型号 品牌 获取价格 描述 数据表
S25FL128P0XNFI013 SPANSION

获取价格

 		128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus
S25FL128POXMFI000 SPANSION

获取价格

 		Flash, 16MX8, PDSO16
S25FL128POXMFI003 SPANSION

获取价格

 		Flash, 16MX8, PDSO16
S25FL128POXMFI011 SPANSION

获取价格

 		Flash, 16MX8, PDSO16
S25FL128POXMFI013 SPANSION

获取价格

 		Flash, 16MX8, PDSO16
S25FL128POXNFI000 SPANSION

获取价格

 		Flash, 16MX8, PDSO8
S25FL128POXNFI001 SPANSION

获取价格

 		Flash, 16MX8, PDSO8
S25FL128POXNFI011 SPANSION

获取价格

 		Flash, 16MX8, PDSO8
S25FL128R0XMFI000 SPANSION

获取价格

 		Flash, 128MX1, PDSO16, 0.300 INCH, LEAD FREE, PLASTIC, MS-013DAA, SOP-16
S25FL128R0XMFI001 SPANSION

获取价格

 		Flash, 128MX1, PDSO16, 0.300 INCH, LEAD FREE, PLASTIC, MS-013DAA, SOP-16

与S25FL128P0XNFI011相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证