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S25FL128LAGNFM011

更新时间： 2024-09-19 19:42:59
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟光电二极管内存集成电路
页数 文件大小 规格书
154页 12236K
描述
Flash, 32MX4, PDSO8, WSON-8

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S25FL128LAGNFM011 技术参数

生命周期：Active包装说明：HVSON,
Reach Compliance Code：compliant风险等级：5.6
Is Samacsys：N其他特性：IT ALSO HAVE MEMORY WIDTH X 1
备用内存宽度：2最大时钟频率 (fCLK)：133 MHz
JESD-30 代码：R-PDSO-N8长度：6 mm
内存密度：134217728 bit内存集成电路类型：FLASH
内存宽度：4功能数量：1
端子数量：8字数：33554432 words
字数代码：32000000工作模式：SYNCHRONOUS
最高工作温度：125 °C最低工作温度：-40 °C
组织：32MX4封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行：SERIAL
编程电压：3 V筛选级别：AEC-Q100
座面最大高度：0.8 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子形式：NO LEAD
端子节距：1.27 mm端子位置：DUAL
宽度：5 mmBase Number Matches：1

S25FL128LAGNFM011 数据手册

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S25FL256L/S25FL128L  
256 Mbit (32 Mbyte)/128 Mbit (16 Mbyte),  
3.0 V FL-L Flash Memory  
General Description  
The Cypress FL-L Family devices are Flash non-volatile memory products using:  
– Floating Gate technology  
– 65 nm process lithography  
The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output  
(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral  
Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address  
and read data on both edges of the clock.  
The architecture features a Page Programming Buffer that allows up to 256-bytes to be programmed in one operation and provides  
individual 4KB sector, 32KB half block, 64KB block, or entire chip erase.  
By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match  
or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.  
The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or  
embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. These  
memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,  
executing code directly (XIP), and storing re-programmable data.  
Features  
Serial Peripheral Interface (SPI) with Multi-I/O  
– Clock polarity and phase modes 0 and 3  
– Four Security Regions of 256 bytes each outside the main Flash  
array  
– Legacy Block Protection: Block range  
– Double Data Rate (DDR) option  
– Individual and Region Protection  
– Quad peripheral Interface (QPI) option  
– Individual Block Lock: Volatile individual Sector/Block  
– Pointer Region: Non-Volatile Sector/Block range  
– Power Supply Lock-down, Password, or Permanent protection  
of Security Regions 2 and 3 and Pointer Region  
– Extended Addressing: 24- or 32-bit address options  
– Serial Command subset and footprint compatible with S25FL-A,  
S25FL1-K, S25FL-P, S25FL-S and S25FS-S SPI families  
– Multi I/O Command subset and footprint compatible with S25FL-P,  
S25FL-S and S25FS-S SPI families  
Technology  
Read  
– 65 nm Floating Gate Technology  
Single Supply Voltage with CMOS I/O  
– 2.7 V to 3.6 V  
– Commands: Normal, Fast, Dual I/O, Quad I/O, DualO, QuadO,  
DDR Quad I/O.  
– Modes: Burst Wrap, Continuous (XIP), QPI  
– Serial Flash Discoverable Parameters (SFDP) for configuration  
information.  
Temperature Range / Grade  
– Industrial (–40°C to +85°C)  
– Industrial Plus (–40°C to +105°C)  
– Extended (–40°C to +125°C)  
Program Architecture  
– 256 Bytes Page Programming buffer3.0 V FL-L Flash Memory  
– Program suspend and resume  
Erase Architecture  
– Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)  
– Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)  
– Automotive, AEC-Q100 Grade 1 (–40°C to +125°C)  
Packages (all Pb-free)  
– Uniform 4KB Sector Erase  
– Uniform 32KB Half Block Erase  
– Uniform 64KB Block Erase  
– Chip erase  
– 8-pin SOIC 208 mil (SOC008) — S25FL128L only  
– WSON 5 6 mm (WND008) — S25FL128L only  
– WSON 6 8 mm (WNG008) — S25FL256L only  
– 16-pin SOIC 300 mil (SO3016) — S25FL256L only  
– BGA-24 6 8 mm  
– Erase suspend and resume  
100,000 Program/Erase Cycles  
20 Year Data Retention  
– 5 5 ball (FAB024) footprint  
– 4 6 ball (FAC024) footprint  
Security features  
– Status and Configuration Register Protection  
Cypress Semiconductor Corporation  
Document Number: 002-00124 Rev. *C  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised September 26, 2016  
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