Datasheet > S1ABF

S1ABF

更新时间： 2024-09-18 01:25:47

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
2页	686K
描述
50 to 1000 Volts Forward Current

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中文翻译

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数据手册

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S1ABF 数据手册

S1ABF THRU S1MBF

SURFACE MOUNT GENERAL RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current -

1.0 Ampere

FEATURES

SMBF

Cathode Band

Top View

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

For surface mounted applications

Low reverse leakage

0.146(3.70)

0.138(3.50)

0.086(2.20)

0.075(1.90)

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

260 C/10 seconds at terminals

0.173(4.4)

0.165(4.2)

Glass passivated chip junction

0.010(0.26)

0.0071(0.18)

0.051(1.30)

0.043(1.10)

0.051(1.30)

0.039(1.0)

MECHANICAL DATA

Case: JEDEC SMBF molded plastic body

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

0.216(5.5)

0.200(5.1)

Weight

:57mg/0.002oz

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

S1ABF S1BBF S1DBF S1GBF S1JBF S1KBF S1MBF UNITS

MDD Catalog

Number

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000 VOLTS

700 VOLTS

VRRM

VRMS

VDC

100

1000 VOLTS

Maximum DC blocking voltage

Maximum average forward rectified current

at TL=75 C

I(AV)

1.0

Amp

Peak forward surge current

IFSM

30.0

1.1

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

5.0

50.0

TA=100 C

Typical junction capacitance (NOTE 1)

RθJA

C/W

15.0

75.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-50 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

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