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S1AGP-TP PDF预览

S1AGP-TP

更新时间: 2024-11-21 03:34:23
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 73K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

S1AGP-TP 数据手册

 浏览型号S1AGP-TP的Datasheet PDF文件第2页浏览型号S1AGP-TP的Datasheet PDF文件第3页 
S1AGP  
THRU  
S1MGP  
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
For Surface Mount Applications  
1 Amp  
Extremely Low Thermal Resistance  
Easy Pick And Place  
Glass Passivated  
Silicon Rectifier  
50 to 1000 Volts  
High Temp Soldering: 250°C for 10 Seconds At Terminals  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Maximum Ratings  
DO-214AA  
(SMBJ) (LEAD FRAME)  
Operating Temperature: -65°C to +150°C  
Storage Temperature: -65°C to +150°C  
Typical Thermal Resistance: 30°C/W Junction to Terminal  
A
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
B
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
C
S1AGP  
S1BGP  
S1DGP  
S1GGP  
S1JGP  
S1KGP  
S1MGP  
S1AGP  
S1BGP  
S1DGP  
S1GGP  
S1JGP  
S1KGP  
S1MGP  
35V  
70V  
100V  
200V  
100V  
200V  
F
H
140V  
280V  
420V  
560V  
700V  
400V  
600V  
400V  
600V  
D
G
800V  
1000V  
800V  
1000V  
E
DIMENSIONS  
INCHES  
MIN  
MM  
MIN  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIM  
A
MAX  
.185  
.155  
.012  
.060  
.220  
.103  
.087  
.008  
MAX  
4.70  
3.94  
0.31  
1..52  
5.59  
2.62  
2.21  
0.203  
NOTE  
.160  
.130  
.006  
.030  
.200  
.079  
.075  
.002  
4.06  
3.30  
0.15  
0.76  
5.08  
2.01  
1.91  
0.05  
Average Forward  
current  
IF(AV)  
1.0A  
TJ = 100°C  
B
C
D
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine,  
E
F
G
H
Maximum  
IFM = 1.0A;  
TJ = 25°C*  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
1.1V  
SUGGESTED SOLDER  
PAD LAYOUT  
0.106  
IR  
5µA  
TJ = 25°C  
100µA TJ = 125°C  
0.083”  
Typical Junction  
Capacitance  
CJ  
10pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
0.050”  
www.mccsemi.com  
Revision: 5  
2008/01/01  
1 of 3  

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