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S1A-HE3/5AT PDF预览

S1A-HE3/5AT

更新时间: 2024-11-07 20:53:23
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 78K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

S1A-HE3/5AT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:ROHS COMPLIANT, PLASTIC, SMA, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.23
其他特性:HIGH RELIABILITY, FREE WHEELING DIODE, LOW LEAKAGE CURRENT配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:40 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:1.8 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

S1A-HE3/5AT 数据手册

 浏览型号S1A-HE3/5AT的Datasheet PDF文件第2页浏览型号S1A-HE3/5AT的Datasheet PDF文件第3页浏览型号S1A-HE3/5AT的Datasheet PDF文件第4页 
S1A thru S1M  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AC (SMA)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive, and telecommunication.  
IF(AV)  
1.0 A  
VRRM  
IFSM  
EAS  
50 V to 1000 V  
40 A, 30 A  
5 mJ  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
IR  
1.0 μA, 5.0 μA  
1.1 V  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
VF  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL S1A  
S1B  
SB  
S1D  
SD  
S1G  
SG  
S1J  
SJ  
S1K  
SK  
S1M UNIT  
Device marking code  
SA  
SM  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
30  
A
Non-repetitive peak reverse avalanche energy  
at 25 °C, IAS = 1 A, L = 10 mH  
EAS  
5
mJ  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Revision: 26-Mar-12  
Document Number: 88711  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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