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S1A-E3/61T PDF预览

S1A-E3/61T

更新时间： 2024-11-20 22:53:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 88K
描述
DIODE GEN PURP 50V 1A DO214AC

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中文翻译

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S1A-E3/61T 数据手册

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S1A, S1B, S1D, S1G, S1J, S1K, S1M  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount Glass Passivated Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
SMA (DO-214AC)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
Anode  
ADDITIONAL RESOURCES  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive, and telecommunication.  
3
D
3
D
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMA (DO-214AC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant and  
AEC-Q101 qualified  
IF(AV)  
1.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
IFSM  
40 A, 30 A  
5 mJ  
EAS  
IR  
VF  
1.0 μA, 5.0 μA  
1.1 V  
(“_X” denotes revision code e.g. A, B,.....)  
TJ max.  
150 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Package  
SMA (DO-214AC)  
Single  
Circuit configuration  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL S1A  
S1B  
SB  
S1D  
SD  
S1G  
SG  
S1J  
SJ  
S1K  
SK  
S1M UNIT  
Device marking code  
SA  
SM  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
30  
A
Non-repetitive peak reverse avalanche energy  
at 25 °C, IAS = 1 A, L = 10 mH  
EAS  
5
mJ  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 21-Feb-2020  
Document Number: 88711  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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S1A-E3/61T 替代型号

型号 品牌 替代类型 描述 数据表
S1A-E3/5AT VISHAY

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