S1A, S1B, S1D, S1G, S1J, S1K, S1M
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Vishay General Semiconductor
Surface-Mount Glass Passivated Rectifier
FEATURES
Available
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMA (DO-214AC)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
Anode
ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
3
D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
IF(AV)
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
IFSM
40 A, 30 A
5 mJ
EAS
IR
VF
1.0 μA, 5.0 μA
1.1 V
(“_X” denotes revision code e.g. A, B,.....)
TJ max.
150 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Package
SMA (DO-214AC)
Single
Circuit configuration
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1A
S1B
SB
S1D
SD
S1G
SG
S1J
SJ
S1K
SK
S1M UNIT
Device marking code
SA
SM
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
100
1000
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
EAS
5
mJ
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Revision: 21-Feb-2020
Document Number: 88711
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000