Datasheet > RUF025N02

RUF025N02

更新时间： 2024-10-14 03:35:35

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
5页	105K
描述
1.5V Drive Nch MOSFET

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中文翻译

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RUF025N02 数据手册

RUF025N02

Transistors

1.5V Drive Nch MOSFET

RUF025N02

zStructure

zDimensions (Unit : mm)

Silicon N-channel MOSFET

TUMT3

zFeatures

1) Low On-resistance.

2) Space saving, small surface mount package (TUMT3).

3) Low voltage drive (1.5V drive).

(1) Gate

(2) Source

(3) Drain

Abbreviated symbol : XE

zApplications

Switching

zPackaging specifications

zInner circuit

Package

Taping

(3)

Type

Code

Basic ordering unit (pieces)

3000

RUF025N02

(1)

∗2

∗1

(2)

(1) Gate

(2) Source

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

2.5

Drain current

Pulsed

∗1

I_DP

I_S

Source current

(Body diode)

Continuous

0.6

∗1

∗2

Pulsed

I_SP

0.8

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Limits

156

Unit

∗

Channel to ambient

∗ Mounted on a ceramic board

Rth(ch-a)

°C/W

1/4

12 3 4 5

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