Datasheet > RUH120N90M

RUH120N90M

更新时间： 2024-11-17 17:02:11

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
7页	229K
描述
DFN5060

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中文翻译

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数据手册

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RUH120N90M 数据手册

RUH120N90M

N-Channel Advanced Power MOSFET

Features

Pin Description

• 120V/90A,

R_{DS (ON)}=6.2mΩ(Typ.)@V_GS=10V

R_{DS (ON)}=7mΩ(Typ.)@V_GS=4.5V

• Ultra Low On-Resistance

• Fast Switching Speed

• 100% Avalanche Tested

• Uses Ruichips advanced RUISGT^TMtechnology

• Lead Free and Green Devices (RoHS Compliant)

PIN1

DFN5060

Applications

• Synchronous Rectification for Flyback Converters

• PD Adaptors

• Charger for Mobile

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

120

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

150

°C

T_STG

I_S

-55 to 150

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

360

I_DP

Continuous Drain Current@T_C(V_GS=10V)

②

I_D

③

Continuous Drain Current@T_A(V_GS=10V)

Maximum Power Dissipation@T_C

P_D

2.2

1.4

③

Maximum Power Dissipation@T_A

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. B– Aug., 2020

www.ruichips.com

12 3 4 5 6 7

中文翻译

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