Datasheet > RUH1H139S

RUH1H139S

更新时间： 2024-04-09 18:59:03

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
6页	310K
描述
TO263

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数据手册

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RUH1H139S 数据手册

RUH1H139S

N-Channel Advanced Power MOSFET

Features

Pin Description

• 100V/138A,

R_{DS (ON)}=4.6mΩ(Typ.)@V_GS=10V

• Uses Ruichips advanced RUISGT^TMtechnology

• Ultra Low On-Resistance

• Excellent Q_gxR_DS(on)Product

• 100% Avalanche Tested

• 175°C Operating Temperature

• Lead Free and Green Devices (RoHS Compliant)

TO263

Applications

• Motor Drives

• Uninterruptible Power Supplies

• DC/DC Converter

• General Purpose Applications

• Synchronous Rectification for Flyback Converters

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

100

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

138

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

550

138

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

294

147

0.51

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_JC

R_JA

°C/W

Drain-Source Avalanche Ratings

③

E_AS

Avalanche Energy, Single Pulsed

900

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– FEB., 2023

www.ruichips.com

12 3 4 5 6

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