Datasheet > RUH120N81L

RUH120N81L

更新时间： 2024-10-15 17:01:55

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
6页	266K
描述
TO-252

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中文翻译

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数据手册

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RUH120N81L 数据手册

RUH120N81L

N-Channel Advanced Power MOSFET

Features

Pin Description

• 120V/80A,

R_{DS (ON)}=9.5mΩ(Typ.)@V_GS=10V

R_{DS (ON)}=11mΩ(Typ.)@V_GS=4.5V

• Uses Ruichips advanced RUISGT^TMtechnology

• Ultra Low On-Resistance

• Excellent Qg&R_DS(on)Performance

• Low Gate Charge Minimizing Switching Loss

• 100% Avalanche Tested

• Lead Free and Green Devices (RoHS Compliant)

TO252

Applications

• Motor Drives

• Uninterruptible Power Supplies

• DC/DC Converter

• Load switch

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

120

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

320

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

224

112

0.67

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_JC

R_JA

°C/W

Drain-Source Avalanche Ratings

③

Avalanche Energy, Single Pulsed

400

E_AS

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– MAY., 2023

www.ruichips.com

12 3 4 5 6

中文翻译

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