Datasheet > RUH1H150R-A

RUH1H150R-A

更新时间： 2024-04-09 19:00:21

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
6页	396K
描述
TO220

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RUH1H150R-A 数据手册

RUH1H150R-A

N-Channel Advanced Power MOSFET

Features

Pin Description

• 100V/150A,

R_{DS (ON)}=3.4mΩ(Typ.)@V_GS=10V

• Using Ruichips Advanced RUISGT^TMTechnology

• Ultra Low On-Resistance

• Excellent Q_g&R_DS(on)Performance

• Low Gate Charge Minimizing Switching Loss

• 100% Avalanche Tested

• Lead Free and Green Devices (RoHS Compliant)

TO220

Applications

• BMS

• Motor Drives

• Uninterruptible Power Supplies

• Synchronous Rectification

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

100

±25

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

150

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

600

150

106

319

160

0.47

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_JC

R_JA

°C/W

Drain-Source Avalanche Ratings

③

E_AS

Avalanche Energy, Single Pulsed

900

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2023

www.ruichips.com

12 3 4 5 6

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