Datasheet > RT3J22M

RT3J22M

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
4页	148K
描述
Composite Transistor

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数据手册

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RT3J22M 数据手册

PRELIMINARY

RT3J22M

Composite Transistor

For high speed switching

Silicon Ｐ-channel MOSFET

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Limits

Symbol

Parameter

Test conditions

Unit

Min

-30

Typ

Max

V(BR)DSS

IGSS

Drain-source breakdown voltage

Gate-source leak current

Zero gate voltage drain current

Gate threshold voltage

I _D=-100μA, V_GS=0V

V _GS=±5V, V_DS=0V

_DS=-30V ,V_GS=0V

±0.5

-50

-1.2

μA

IDSS

Vth

I _D=-250μA, V _DS= V _GS

V _DS=-10V, I _D=-0.1A

-0.6

Forward transfer admittance

Static drain-source on-state resistance

Input capacitance

220

| Yfs

RDS(ON)

Ciss

I _D=-100mA, V _GS=-4.0V

V _DS=-10V, V _GS=0V,f=1MHz

7.3

100

Coss

tON

Output capacitance

_DD=-5V , I _D=-10mA

Switching time

V _GS=0～-5V

tOFF

Switching time test condition

test circuit

OUT

10%

input

waveform

90%

50Ω

-5V

VDD

10μs

VDS(ON）

90%

VDD=-5V

D.U.≦1%

Common source

Ta=25℃

output

waveform

10%

VDD

toff

ton

ISAHAYA ELECTRONICS CORPORATION

123 4

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