Datasheet > RT3N66M

RT3N66M

更新时间： 2024-01-09 16:35:21

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	54K
描述
Composite Transistor With Resistor

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技术参数
数据手册

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RT3N66M 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

RT3N66M 数据手册

PRELIMINARY

RT3N66M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

DESCRIPTION

RT3N66M is

composite transistor built with

2.1

RT1N430 chip and RT1N430 chip in SC-88 package.

1.25

FEATURE

Silicon epitaxial type

①

②

③

⑥

⑤

④

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

⑥

RTr1

④

⑤

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

RTr2

⑥:COLLECTOR1

JEITA：SC-88

①

②

③

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

RATING

UNIT

MARKING

CBO

EBO

CEO

⑥ ⑤ ④

100

℃

N6 6

Peak Collector current

Collector dissipation（Total, Ta=25℃）

Junction temperature

200

150

＋150

-55～＋150

① ② ③

℃

Storage temperature

stg

ISAHAYA ELECTRONICS CORPORATION

12 3

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