Datasheet > RT3N22U

RT3N22U

更新时间： 2024-09-18 03:29:43

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	150K
描述
Composite Transistor With Resistor

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中文翻译

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数据手册

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RT3N22U 数据手册

RT3N22U

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

DESCRIPTION

RT3N22U is a composite transistor built with two

1.6 ±0.05

1.2 ±0.05

RT1N241 in USM6F package.

1pin ﾏｰｸ

(0.5)

FEATURE

Silicon epitaxial type

0.5

(0.95)

Each transistor elements are independent.

Mini package for easy mounting

1.6

1. 0

±0.05

0.5

0.2 ±0.05

(0.5)

APPLICATION

Inverted circuit, switching circuit,

(Φ0.1～0.2)

interface circuit, driver circuit

0.12

±0.05

0.5

±0.05

⑥

④

⑤

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

RTr1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

RTr2

⑥:COLLECTOR1

JEITA：－

①

②

③

ISAHAYA：USM6F

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

RATING

UNIT

MARKING

CBO

EBO

CEO

100

℃

Peak Collector current

Collector dissipation（Total, Ta=25℃）

Junction temperature

200

125

＋150

-55～＋150

１

℃

Storage temperature

stg

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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