Datasheet > RT3P33M

RT3P33M

更新时间： 2024-09-18 03:29:43

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	57K
描述
Composite Transistor With Resistor

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中文翻译

获取价格

数据手册

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RT3P33M 数据手册

PRELIMINARY

RT3P33M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

DESCRIPTION

RT3P33M is a composite transistor built with

RT1P441 chip and RT1P441 chip in SC-88 package.

2.1

1.25

FEATURE

①

⑥

Silicon epitaxial type

②

③

⑤

④

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

⑥

④

⑤

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

RTr1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

RTr2

⑥:COLLECTOR1

JEITA：SC-88

①

②

③

MAXIMUM RATING (Ta=25

℃)

SYMBOL

V_CBO

V_EBO

V_CEO

I_C

PARAMETER

RATING

-50

UNIT

MARKING

Collector to Base voltage

Emitter to Base voltage

-10

⑥ ⑤ ④

Collector to Emitter voltage

Collector current

-50

-100

℃

P 3 3

Peak Collector current

Collector dissipation（Total, Ta=25℃）

Junction temperature

-200

I_CM

150

P_C

＋150

-55～＋150

T_j

① ② ③

℃

Storage temperature

T_stg

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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RT3P66M	ISAHAYA	获取价格	Composite Transistor With Resistor
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RT3PE3000L-1FG484B	ACTEL	获取价格	Radiation-Tolerant ProASIC3 Low-Power Space- Flight Flash FPGAs
RT3PE3000L-1LG484B	ACTEL	获取价格	Radiation-Tolerant ProASIC3 Low-Power Space- Flight Flash FPGAs
RT3PE3000L-1LG484B	MICROSEMI	获取价格	Field Programmable Gate Array, 75264 CLBs, 3000000 Gates, 250MHz, 75264-Cell, CMOS, 1 MM P