Datasheet > RT3P66M

RT3P66M

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	56K
描述
Composite Transistor With Resistor

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数据手册

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RT3P66M 数据手册

PRELIMINARY

RT3P66M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

DESCRIPTION

RT3P66M is a composite transistor built with

RT1P430 chip and RT1P430 chip in SC-88 package.

2.1

1.25

FEATURE

①

⑥

Silicon epitaxial type

②

③

⑤

④

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

⑥

④

⑤

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

RTr1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

RTr2

⑥:COLLECTOR1

JEITA：SC-88

①

②

③

MAXIMUM RATING (Ta=25

℃)

SYMBOL

V_CBO

V_EBO

V_CEO

I_C

PARAMETER

RATING

-50

UNIT

MARKING

Collector to Base voltage

Emitter to Base voltage

-6

⑥ ⑤ ④

Collector to Emitter voltage

Collector current

-50

-100

℃

T 6 6

Peak Collector current

Collector dissipation（Total, Ta=25℃）

Junction temperature

-200

I_CM

150

P_C

＋150

-55～＋150

T_j

① ② ③

℃

Storage temperature

T_stg

ISAHAYA ELECTRONICS CORPORATION

12 3

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