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RT3PE3000L-CG896B PDF预览

RT3PE3000L-CG896B

更新时间: 2023-01-02 16:51:10
品牌 Logo 应用领域
美高森美 - MICROSEMI
页数 文件大小 规格书
174页 8522K
描述
Field Programmable Gate Array, 75264 CLBs, 3000000 Gates, 250MHz, 75264-Cell, CMOS, CPGA896, 1 MM PITCH, CERAMIC, CGA-896

RT3PE3000L-CG896B 数据手册

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Revision 5  
Radiation-Tolerant ProASIC3 Low Power Spaceflight  
Flash FPGAs with Flash*Freeze Technology  
High-Performance Routing Hierarchy  
Features and Benefits  
Segmented, Hierarchical Routing and Clock Structure  
High-Performance, Low-Skew Global Network  
Architecture Supports Ultra-High Utilization  
MIL-STD-883 Class B Qualified Packaging  
Ceramic Column Grid Array with Six Sigma Copper-Wrapped  
Lead-Tin Columns  
Advanced and Pro (Professional) I/Os  
Land Grid Array  
700 Mbps DDR, LVDS-Capable I/Os  
Ceramic Quad Flat Pack  
1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation  
Bank-Selectable I/O Voltages—up to 8 Banks per Chip  
Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /  
2.5 V / 1.8 V / 1.5 V / 1.2 V, and 3.3 V PCI / 3.3 V PCI-X  
Differential I/O Standards: LVPECL, LVDS, B-LVDS, and M-LVDS  
Voltage-Referenced I/O Standards: GTL+ 2.5 V / 3.3 V, GTL  
2.5 V / 3.3 V, HSTL Class I and II, SSTL2 Class I and II, SSTL3  
Class I and II (RT3PE3000L only)  
Low Power  
Dramatic Reduction in Dynamic and Static Power  
1.2 V to 1.5 V Core and I/O Voltage Support for Low Power  
Low Power Consumption in Flash*Freeze Mode  
Radiation Performance  
25 Krad to 30 Krad with 10% Propagation Delay Increase  
(TM 1019 Cond. A, Dose Rate 5 Krad/min)  
Up to 40 Krad with 10% Propagation Delay Increase, Dose Rate  
< 1 Krad/min  
Up to 55 Krad with 15% Propagation Delay Increase, Dose  
Rate < 1 Krad/min  
Wafer-Lot-Specific TID Reports  
I/O Registers on Input, Output, and Enable Paths  
Hot-Swappable and Cold-Sparing I/Os  
Programmable Output Slew Rate and Drive Strength  
Programmable Input Delay (RT3PE3000L only)  
Schmitt Trigger Option on Single-Ended Inputs (RT3PE3000L)  
Weak Pull-Up/-Down  
High Capacity  
IEEE 1149.1 (JTAG) Boundary Scan Test  
600 k to 3 M System Gates  
Up to 504 kbits of True Dual-Port SRAM  
Up to 620 User I/Os  
Pin-Compatible Packages across the Radiation-Tolerant (RT)  
®
ProASIC 3 Family  
Clock Conditioning Circuit (CCC) and PLL  
Reprogrammable Flash Technology  
Six CCC Blocks, All with Integrated PLL  
Configurable Phase Shift, Multiply/Divide, Delay Capabilities,  
and External Feedback  
Wide Input Frequency Range 1.5 MHz to 250 MHz (1.2 V  
systems) and 350 MHz (1.5 V systems)  
130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS  
Live-at-Power-Up (LAPU) Level 0 Support  
Single-Chip Solution  
Retains Programmed Design when Powered Off  
High Performance  
SRAMs and FIFOs  
350 MHz (1.5 V) and 250 MHz (1.2 V) System Performance  
3.3 V, 66 MHz, 66-Bit PCI (1.5 V); 66 MHz, 32-Bit PCI (1.2 V)  
Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4, ×9,  
and ×18 organizations available)  
In-System Programming (ISP) and Security  
True Dual-Port SRAM (except ×18)  
ISP Using On-Chip 128-Bit Advanced Encryption Standard (AES)  
Decryption via JTAG (IEEE 1532–compliant)  
24 SRAM and FIFO Blocks with Synchronous Operation:  
– 250 MHz: For 1.2 V Systems  
– 350 MHz: For 1.5 V Systems  
®
FlashLock Designed to Secure FPGA Contents  
Table I-1 • Radiation-Tolerant (RT) ProASIC3 Low Power Spaceflight FPGAs  
RT ProASIC3 Devices  
System Gates  
RT3PE600L  
RT3PE3000L  
600,000  
13,824  
108  
24  
3,000,000  
VersaTiles (D-flip-flops)  
RAM kbits (1,024 bits)  
4,608-Bit Blocks  
75,264  
504  
112  
1
FlashROM Kbits  
1
Secure (AES) ISP  
Integrated PLL in CCCs  
VersaNet Globals  
I/O Banks  
Yes  
6
Yes  
6
18  
18  
8
8
Maximum User I/Os  
270  
620  
Package Pins  
CCGA/LGA  
CQFP  
CG/LG484  
CQ256  
CG/LG484, CG/LG896  
CQ256  
September 2012  
I
© 2012 Microsemi Corporation  

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