Datasheet > RT3N22M

RT3N22M

更新时间： 2024-09-18 03:29:43

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	55K
描述
Compound Transistor With Resistor

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中文翻译

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数据手册

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RT3N22M 数据手册

RT3N22M

Compound Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

DESCRIPTION

RT3N22M is a compound transistor built with two

2.1

RT1N241 in SC-88 package.

1.25

FEATURE

Silicon epitaxial type

①

②

③

⑥

⑤

④

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

⑥

RTr1

④

⑤

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

RTr2

⑥:COLLECTOR1

JEITA：SC-88

①

②

③

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

RATING

UNIT

MARKING

CBO

EBO

CEO

100

℃

N2 2

Peak Collector current

Collector dissipation（Total, Ta=25℃）

Junction temperature

200

150

＋150

-55～＋150

１

℃

Storage temperature

stg

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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