Datasheet > RT3K66M

RT3K66M

更新时间： 2025-07-28 06:08:51

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体开关晶体管
页数	文件大小	规格书
4页	143K
描述
Composite Transistor For high speed switching Silicon N-channel MOSFET

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中文翻译

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数据手册

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RT3K66M 数据手册

RT3K66M

Composite Transistor

For high speed switching

Silicon N-channel MOSFET

DESCRIPTION

OUTLINE DRAWING

Unit：mm

RT3K66M is a composite transistor built with two

INK0012AX chips in SC-88 package.

2.1

1.25

FEATURE

・Input impedance is high, and not necessary to consider a drive

①

②

③

⑥

electric current.

⑤

④

・Vth is low, and drive by low voltage is possible. Vth=1.0～2.0V

・Low on Resistance.

R^DS(on)=1.7Ω(TYP)＠I_D=100mA, V_GS=4.0V

R^DS(on)=1.0Ω(TYP)＠I_D=100mA, V_GS=10V

・High speed switching.

・Small package for easy mounting.

APPLICATION

High speed switching , Analog switching

⑤

④

⑥

TERMINAL

CONNECTOR

①：SOURCE1

②：GATE1

Tr.1

③：DRAIN2

④：SOURCE2

⑤：GATE2

Tr.2

⑥:DRAIN1

①

②

③

JEITA：SC-88

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

RATING

UNIT

MARKING

Drain-source voltage

DSS

⑤ ④

⑥

Gate-source voltage

±20

GSS

Drain current

200

℃

Total power dissipation（Ta=25℃）

Channel temperature

150

６６

Ｋ

CＹ９９７

＋150

-55～＋150

stg

℃

Range of Storage temperature

① ② ③

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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