Datasheet > RT3P11M

RT3P11M

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	57K
描述
Composite Transistor With Resistor

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中文翻译

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RT3P11M 数据手册

RT3P11M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

DESCRIPTION

RT3P11M is a composite transistor built with two

2.1

RT1P141 in SC-88 package.

1.25

FEATURE

Silicon epitaxial type

①

②

③

⑥

⑤

④

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

⑥

⑤

④

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

RT r2

RT r1

⑥:COLLECTOR1

JEITA：SC-88

①

②

③

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Input Voltage

RATING

-50

UNIT

MARKING

CBO

EBO

CEO

-10

-50

-40

P1 1

Collector current

-100

℃

Peak Collector current

Collector dissipation（Total, Ta=25℃）

Junction temperature

Storage temperature

-200

150

１

＋150

-55～＋150

℃

stg

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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