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RT2C00M PDF预览

RT2C00M

更新时间: 2024-11-12 03:35:47
品牌 Logo 应用领域
谏早电子 - ISAHAYA 晶体晶体管
页数 文件大小 规格书
4页 58K
描述
COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

RT2C00M 数据手册

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RT2C 00M  
COMPOSITE TRANSISTOR  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
OUTLINE DRAWING  
Unit:mm  
DESCRIPTION  
2.1  
RT2C00M is a composite transistor built with two 2SC3052 chips in  
SC-88 package.  
1.25  
FEATURE  
Silicon npn epitaxial type  
Each transistor elements are independent.  
Mini package for easy mounting  
APPLICATION  
For low frequency amplify application  
TERMINAL CONNECTOR  
BASE1  
EMITTERCOMMON)  
BASE2  
Tr2  
Tr1  
COLLECTOR2  
COLLECTOR1  
JEITA:-  
JEDEC:-  
MAXIMUM RATINGS Ta=25Tr1Tr2)  
Symbol  
VCBO  
Parameter  
Collector to Base voltage  
Emitter to Base voltage  
Ratings  
Unit  
MARKING  
50  
V
V
VEBO  
VCEO  
I C  
6
50  
Collector to Emitter voltage  
Collector current  
V
L E  
200  
mA  
mW  
PC  
Collector dissipationTotal Ta=25)  
Junction temperature  
Storage temperature  
150  
TYPE  
hFE ITEM  
Tj  
+125  
-55~+125  
② ③  
Tstg  
ISAHAYA ELECTRONICS CORPORATION  

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