Datasheet > RT2P09M

RT2P09M

更新时间： 2024-11-18 03:29:51

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体开关晶体管
页数	文件大小	规格书
3页	54K
描述
COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE

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中文翻译

获取价格

数据手册

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RT2P09M 数据手册

RT2P09M

COMPOSITE TRANSISTOR WITH RESISTOR

FOR SWITCHING APPLICATION

SILICON PNP EPITAXIAL TYPE

OUTLINE DRAWING

Unit:mm

DESCRIPTION

2.1

RT2P09M is a composite transistor with built-in bias resistor

1.25

FEATURE

●Built-in bias resistor ( R1=2.2 KΩ , R2=47KΩ )

①

②

③

⑤

④

●Mini package for easy mounting

APPLICATION

Inverted circuit , switching circuit , interface circuit , driver circuit

⑤

④

TERMINAL CONNECTOR

①：BASE1

②：EMITTER（COMMON）

③：BASE2

RTr2

RTr1

④：COLLECTOR2

⑤：COLLECTOR1

R1 R2

R2 R1

JEITA：SC-88A

①

②

③

MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2）

Symbol

V_CBO

Parameter

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Ratings

-50

Unit

MARKING

⑤

④

V_EBO

V_CEO

I _C

-6

-50

-100

℃

I _CM

P_C

Peak Collector current

-200

Collector dissipation（Total Ta=25℃）

Junction temperature

Storage temperature

150

①

② ③

T_j

＋150

-55～＋150

T_stg

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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