Datasheet > RT2P40S89

RT2P40S89

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	1000K
描述
Package / Case : SOT-89;Mounting Style : SMD/SMT;Power Rating : 0.5 W;Transistor Polarity : PNP;VCEO : 32 V;VCBO : 40 V;VEBO : 5 V;Max Collector Current : 2.0 A;DC Collector/Base Gain hfe Min : 82;DC Current Gain hFE Max : 390

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数据手册

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RT2P40S89 数据手册

RT2P40S8

Silicon PNP Transistor

SOT-89

FEATURES

* Low V CE（sat）

* Marking:1188

1.Base 2.Collector 3.Emitter

Maximum ratings(Ta=25℃ unless otherwise noted)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Value

Symbol

VCBO

VCEO

VEBO

Unit

-40

-32

-5

-2

Collector Power Dissipation

Junction Temperature

Storage Temperature

0.5

℃

150

-55~150

Tstg

Electrical Characteristics (Ta=25℃ unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Test Condition

IC=-50uA IE=0

IC=-1mA IB=0

IE=-50uA IC=0

VCB=-20V IE=0

VEB=-4V IC=0

Symbol

VCBO

VCEO

VEBO

ICBO

Min

-40

-32

-5

Max

Unit

-1

IEBO

-1

180

270

390

-0.8

DC Current Gain

HFE1

VCE=-3V IC=-500mA

120

180

Collector-Emitter Saturation Voltage

Transition frequency

IC=-2A IB=-500mA

VCE=-5V IC=-500mA

VCB=-10V,IE=0,f=1MHz

VCE(sat)

100

MHz

Collector output capacitance

Cob

2023-12/17

REV:O

12 3 4

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