Datasheet > RT2N09M

RT2N09M

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体开关晶体管
页数	文件大小	规格书
3页	54K
描述
COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE

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RT2N09M 数据手册

RT2N09M

COMPOSITE TRANSISTOR WITH RESISTOR

FOR SWITCHING APPLICATION

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

Unit:mm

DESCRIPTION

2.1

RT2N09M is a composite transistor with built-in bias resistor

1.25

FEATURE

●Built-in bias resistor ( R1=2.2 KΩ , R2=47KΩ )

①

②

③

⑤

④

●Mini package for easy mounting

APPLICATION

Inverted circuit , switching circuit , interface circuit , driver circuit

⑤

④

TERMINAL CONNECTOR

①：BASE１

②：EMITTER（COMMON）

③：BASE２

RTr2

RTr1

④：COLLECTOR２

⑤：COLLECTOR１

R1 R2

R2 R1

JEITA：－

①

②

③

JEDEC：－

MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2）

Symbol

V_CBO

Parameter

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Ratings

Unit

MARKING

⑤

④

V_EBO

V_CEO

I _C

100

℃

I _CM

P_C

Peak Collector current

200

Collector dissipation（Total Ta=25℃）

Junction temperature

Storage temperature

150

①

② ③

T_j

＋150

-55～＋150

T_stg

ISAHAYA ELECTRONICS CORPORATION

12 3

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