Datasheet > RT290-20

RT290-20

更新时间： 2024-11-10 01:21:07

品牌	Logo	应用领域
MARKTECH		/
页数	文件大小	规格书
4页	229K
描述
LEDs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RT290-20 数据手册

RazerThin LEDs

CxxxRT290-S0200

Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efﬁcient InGaN materials

with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green

LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward

voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs

include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required.

FEATURES

APPLICATIONS

•

Thin 95 μm Chip

Reduced Forward Voltage

3.2 V Typical at 20 mA

RazerThin LED Performance

•

Mobile Phone Key Pads

–

White LEDs

Blue LEDs

–

•

Green LEDs

–

460nm - 3.8-11.1 mW

470nm - 3.4-10.4 mW

505nm - 2.0-6.5 mW

527nm - 1.7-6.0 mW

•

Cellular Phone LCD Backlighting

Digital Camera Flash For Mobile Appliances

Automotive Dashboard Lighting

LED Video Displays

•

Single Wire Bond Structure

Class 2 ESD Rating

Audio Product Display Lighting

CxxxRT290-S0200 Chip Diagram

Top View

Bottom View

Die Cross Section

G•SiC LED Chip

270 x 270 μm

InGaN

Anode (+)

Mesa (junction)

246 x 246 μm

SiC Substrate

h = 95 μm

Backside

Metallization

Gold Bond Pad

110 μm Diameter

Cathode (-)

Subject to change without notice.

www.cree.com

ꢀ

12 3 4

中文翻译

下载PDF

与RT290-20相关器件

型号	品牌	获取价格	描述	数据表
RT290-20_15	MARKTECH	获取价格	LEDs
RT2902YDT	STMICROELECTRONICS	获取价格	RobuST low-power quad operational amplifier
RT2903H	STMICROELECTRONICS	获取价格	RobuST low-power dual voltage comparators
RT2903HYDT	STMICROELECTRONICS	获取价格	RobuST low-power dual voltage comparators
RT290-5	MARKTECH	获取价格	LEDs
RT290-5_15	MARKTECH	获取价格	LEDs
RT2910A	RICHTEK	获取价格	暂无描述
RT2A00AM1E	ISAHAYA	获取价格	Transistor
RT2A00AM1F	ISAHAYA	获取价格	Transistor
RT2A00M	ISAHAYA	获取价格	COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE