Datasheet > RT2A00M

RT2A00M

更新时间： 2024-02-29 19:23:15

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
4页	59K
描述
COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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技术参数
数据手册

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RT2A00M 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

RT2A00M 数据手册

RT2A 00M

COMPOSITE TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

OUTLINE DRAWING

Unit:mm

DESCRIPTION

2.1

RT2A00M isacompositetransistor builtwithtwo 2SA1602A chipsin

SC-88package.

1.25

FEATURE

①

⑤

④

●Silicon pnp epitaxial type

Each transistor elements are independent.

●Mini package for easy mounting

②

③

APPLICATION

For low frequency amplify application

⑤

④

TERMINAL CONNECTOR

①：BASE１

②：EMITTER（COMMON）

③：BASE２

Tr1

Tr2

④：COLLECTOR２

⑤：COLLECTOR１

JEITA：－

JEDEC：－

①

②

③

MAXIMUM RATINGS （Ta=25℃）（Tr1、Tr2）

Symbol

V_CBO

Parameter

Collector to Base voltage

Emitter to Base voltage

Ratings

-60

Unit

MARKING

⑤

④

V_EBO

V_CEO

I _C

-6

Collector to Emitter voltage

Collector current

-50

・

M E

-200

℃

P_C

Collector dissipation（Total Ta=25℃）

Junction temperature

Storage temperature

150

T_j

＋125

-55～＋125

TYPE

hFE ITEM

①

② ③

T_stg

ISAHAYA ELECTRONICS CORPORATION

12 3 4

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