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RT2A00ME PDF预览

RT2A00ME

更新时间: 2024-09-24 19:32:23
品牌 Logo 应用领域
谏早电子 - ISAHAYA /
页数 文件大小 规格书
4页 57K
描述
Transistor

RT2A00ME 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

RT2A00ME 数据手册

 浏览型号RT2A00ME的Datasheet PDF文件第2页浏览型号RT2A00ME的Datasheet PDF文件第3页浏览型号RT2A00ME的Datasheet PDF文件第4页 
RT2A 00M  
COMPOSITE TRANSISTOR  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON PNP EPITAXIAL TYPE  
OUTLINE DRAWING  
Unit:mm  
DESCRIPTION  
2.1  
RT2A00M isacompositetransistor builtwithtwo 2SA1602A chipsin  
SC-88package.  
1.25  
FEATURE  
Silicon pnp epitaxial type  
Each transistor elements are independent.  
Mini package for easy mounting  
APPLICATION  
For low frequency amplify application  
TERMINAL CONNECTOR  
BASE1  
EMITTERCOMMON)  
BASE2  
Tr1  
Tr2  
COLLECTOR2  
COLLECTOR1  
JEITA:-  
JEDEC:-  
MAXIMUM RATINGS Ta=25Tr1Tr2)  
Symbol  
VCBO  
Parameter  
Collector to Base voltage  
Emitter to Base voltage  
Ratings  
-60  
Unit  
MARKING  
V
V
VEBO  
VCEO  
I C  
-6  
Collector to Emitter voltage  
Collector current  
-50  
V
M E  
-200  
mA  
mW  
PC  
Collector dissipationTotal Ta=25)  
Junction temperature  
Storage temperature  
150  
Tj  
+125  
-55~+125  
TYPE  
hFE ITEM  
② ③  
Tstg  
ISAHAYA ELECTRONICS CORPORATION