Datasheet > RS1N110AT

RS1N110AT

更新时间： 2024-09-16 17:01:03

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
13页	2870K
描述
RS1N110AT is a power MOSFET with low-on resistance and High power small mold package, suitable for switching and motor drives.

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RS1N110AT 数据手册

RS1N110AT

Pch -80V -43A Power MOSFET

Datasheet

llOutline

V_DSS

-80V

21.0mΩ

±43A

R_DS(on)(Max.)

HSOP8

I_D

P_D

40W

llInner circuit

llFeatures

1) Low on - resistance

2) High power package (HSOP8)

3) Pb-free plating ; RoHS compliant

4) Halogen free

5) 100% Rg and UIS tested

llPackaging specifications

Embossed

Tape

Packing

Reel size (mm)

330

llApplication

Switching

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Type

2500

Motor drives

TB1

RS1N110AT

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Drain - Source voltage

Symbol

Value

Unit

V_DSS

-80

±43

T_c= 25°C

T_a= 25°C

I_D

Continuous drain current

I_D

±11

I_DP

Pulsed drain current

±44

V_GSS

Gate - Source voltage

±20

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

-11

E_AS

8.7

℃

P_D

Power dissipation

P_D

3.0

T_j

Junction temperature

150

T_stg

Operating junction and storage temperature range

-55 to +150

www.rohm.com

1/10

20231128 - Rev.002

12 3 4 5 6 7...13

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