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RS1PBHM3/I

更新时间： 2024-09-15 19:23:19
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 78K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA,

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RS1PBHM3/I 技术参数

生命周期：Active包装说明：R-PDSO-F2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.18
其他特性：FREE WHEELING DIODE外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：DO-220AA
JESD-30 代码：R-PDSO-F2元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE参考标准：AEC-Q101
最大重复峰值反向电压：100 V最大反向恢复时间：0.15 µs
表面贴装：YES端子形式：FLAT
端子位置：DUALBase Number Matches：1

RS1PBHM3/I 数据手册

 浏览型号RS1PBHM3/I的Datasheet PDF文件第2页浏览型号RS1PBHM3/I的Datasheet PDF文件第3页浏览型号RS1PBHM3/I的Datasheet PDF文件第4页 
RS1PB, RS1PD, RS1PG, RS1PJ  
www.vishay.com  
Vishay General Semiconductor  
High Current Density Surface Mount Glass Passivated  
Fast Switching Rectifier  
FEATURES  
Available  
• Very low profile - typical height of 1.0 mm  
eSMP® Series  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Fast switching for high efficiency  
• Low thermal resistance  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-220AA (SMP)  
• AEC-Q101 qualified available  
- Automotive ordering code; base P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
VRRM  
100 V, 200 V, 400 V, 600 V  
Case: DO-220AA (SMP)  
Molding compound meets UL 94 V-0 flammability rating  
IFSM  
30 A  
150 ns, 250 ns  
1 μA  
trr  
IR  
Base P/N-M3  
commercial grade  
Base P/NHM3  
AEC-Q101 qualified  
-
halogen-free, RoHS-compliant, and  
VF  
1.3 V  
-
halogen-free, RoHS-compliant, and  
TJ max.  
Package  
Diode variation  
150 °C  
DO-220AA (SMP)  
Single die  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified   
(“_X” denotes revision code e.g. A, B,.....)  
TYPICAL APPLICATIONS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 and HM3 suffix meets JESD 201 class 2 whisker test  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive and telecommunication.  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RS1PB  
RS1PD  
RD  
RS1PG  
RG  
RS1PJ  
RJ  
UNIT  
Device marking code  
RB  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
100  
200  
400  
600  
V
A
1.0  
30  
Peak forward surge current 10 ms single half sine-wave superimposed  
on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL RS1PB  
RS1PD  
RS1PG  
RS1PJ  
UNIT  
(1)  
Maximum instantaneous forward voltage  
IF = 1.0 A  
VF  
1.3  
1.0  
60  
V
TA = 25 °C  
Maximum reverse current at rated   
VR voltage  
(2)  
IR  
μA  
TA = 125 °C  
IF = 0.5 A, IR = 1.0 A,  
Maximum reverse recovery time  
Typical junction capacitance  
trr  
150  
250  
ns  
Irr = 0.25 A  
4.0 V, 1 MHz  
CJ  
9
pF  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
Revision: 29-Feb-16  
Document Number: 88934  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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 		1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-220AA,
RS1PDHM3/I VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-220AA,
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 		High Current Density Surface Mount Glass Passivated Fast Switching Rectifier

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