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RS1PJ-HE3/84A PDF预览

RS1PJ-HE3/84A

更新时间： 2024-11-06 21:21:31
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 88K
描述
1A, 600V, SILICON, SIGNAL DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN

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RS1PJ-HE3/84A 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-220AA包装说明：R-PDSO-F2
针数：2Reach Compliance Code：unknown
风险等级：5.55其他特性：FREE WHEELING DIODE, HIGH RELIABILITY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-220AAJESD-30 代码：R-PDSO-F2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.25 µs
表面贴装：YES端子面层：MATTE TIN
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

RS1PJ-HE3/84A 数据手册

 浏览型号RS1PJ-HE3/84A的Datasheet PDF文件第2页浏览型号RS1PJ-HE3/84A的Datasheet PDF文件第3页浏览型号RS1PJ-HE3/84A的Datasheet PDF文件第4页 
RS1PB thru RS1PJ  
Vishay General Semiconductor  
New Product  
High Current Density Surface Mount  
Glass-Passivated Fast Switching Rectifier  
FEATURES  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Glass passivated chip junction  
• Fast switching for high efficiency  
• Low thermal resistance  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
DO-220AA (SMP)  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive and telecommunication.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
trr  
1 A  
100 V, 200 V, 400 V, 600 V  
30 A  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
150 ns, 250 ns  
1 µA  
IR  
Tj max.  
150 °C  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
PARAMETER  
SYMBOL  
RS1PB  
RS1PD  
RD  
RS1PG  
RG  
RS1PJ  
RJ  
UNIT  
Device marking code  
RB  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (see Fig. 1)  
VRRM  
IF(AV)  
100  
200  
400  
600  
V
A
1.0  
30  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
RS1PB  
RS1PD RS1PG  
RS1PJ  
UNIT  
Maximum instantaneous forward voltage (1) at = 1.0 A  
VF  
1.3  
V
Maximum reverse current at rated  
VR (1) voltage  
TA = 25 °C  
A = 125 °C  
1.0  
60  
IR  
µA  
T
at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
Maximum reverse recovery time  
Typical junction capacitance  
trr  
150  
250  
ns  
at 4.0 V, 1 MHz  
CJ  
9
pF  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number 88934  
23-Jun-06  
www.vishay.com  
1
1234

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