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RS1GL PDF预览

RS1GL

更新时间: 2024-11-14 20:26:11
品牌 Logo 应用领域
虹扬 - HY 光电二极管
页数 文件大小 规格书
2页 27K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon

RS1GL 技术参数

生命周期:Contact Manufacturer包装说明:R-PDSO-F2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.02Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:400 V最大反向恢复时间:0.15 µs
表面贴装:YES端子形式:FLAT
端子位置:DUALBase Number Matches:1

RS1GL 数据手册

 浏览型号RS1GL的Datasheet PDF文件第2页 
RS1AL thru RS1ML  
SURFACE MOUNT FAST RECOVERY  
GLASS PASSIVATED RECTIFIERS  
REVERSE VOLTAGE - 50 to 1000 Volts  
FORWARD CURRENT - 1.0 Ampere  
SOD-123FL  
FEATURES  
Fast switching for high efficiency  
.114(2.9)  
.098(2.5)  
Low cost  
Diffused junction  
Low reverse leakage current  
Low forward voltage drop  
.039(1.0)  
.024(0.6)  
High current capability  
The plastic material carries UL recognition 94V-0  
MECHANICAL DATA  
.047(1.2)  
.031(0.8)  
Case: JEDEC SOD-123FL molded plastic  
body over glass passivated chip  
.043(1.1)  
.020(0.5)  
.154(3.9)  
.138(3.5)  
.004(0.1)max  
.010(0.25)  
.002(0.05)  
Terminals: Solder plated, solderable per  
J-STD-002B and JESD22-B102D  
Polarity: Laser band denotes cathode end  
Weight: 0.017gram  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SYMBOL RS1AL RS1BL RS1DL RS1GL  
RS1JL  
R1JL  
600  
RS1KL RS1ML  
UNIT  
CHARACTERISTICS  
MARKING R1AL  
R1BL  
100  
70  
R1DL  
200  
R1GL  
400  
R1KL  
800  
R1ML  
1000  
700  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
V
V
V
140  
280  
420  
560  
Maximum DC Blocking Voltage  
Maximum Average Forward  
100  
200  
400  
600  
800  
1000  
I(AV)  
1.0  
A
Rectified Current  
@TA=75 ℃  
Peak Forward Surge Current  
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load(JEDEC Method)  
IFSM  
25  
A
1.3  
Peak Forward Voltage at 1.0A DC  
VF  
IR  
V
5.0  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@TJ=25℃  
@TJ=100℃  
μA  
100  
150  
500  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note2)  
Typical Thermal Resistance (Note3)  
Operating Temperature Range  
Trr  
CJ  
250  
nS  
pF  
9
180  
RθJA  
TJ  
/W  
-55 to +150  
-55 to +150  
Storage Temperature Range  
TSTG  
NOTES: 1.Measured with IF=0.5A,IR=1A,IRR=0.25A  
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC  
3.Thermal resistance junction to ambient.  
REV. 1, 30-Dec-2011  
~ 76 ~  

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