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RS1G-M3/61T PDF预览

RS1G-M3/61T

更新时间: 2024-10-14 15:49:59
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 85K
描述
1A,400V,SMRECTIFIER

RS1G-M3/61T 技术参数

生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
Is Samacsys:N其他特性:FREE WHEELING DIODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.15 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

RS1G-M3/61T 数据手册

 浏览型号RS1G-M3/61T的Datasheet PDF文件第2页浏览型号RS1G-M3/61T的Datasheet PDF文件第3页浏览型号RS1G-M3/61T的Datasheet PDF文件第4页 
RS1A, RS1B, RS1D, RS1G, RS1J, RS1K  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Fast Switching Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Fast switching for high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-214AC (SMA)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, and telecommunication.  
IF(AV)  
1.0 A  
VRRM  
50 V, 100 V, 200 V, 400 V, 600 V, 800 V  
IFSM  
30 A  
150 ns, 250 ns, 500 ns  
1.3 V  
MECHANICAL DATA  
trr  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
VF  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS-compliant, and  
TJ max.  
Package  
Diode variation  
150 °C  
DO-214AC (SMA)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RS1A  
RS1B  
RB  
RS1D  
RD  
RS1G  
RG  
RS1J  
RJ  
RS1K  
RK  
UNIT  
Device marking code  
RA  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
500  
800  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 90 °C  
100  
IF(AV)  
1.0  
30  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL RS1A  
RS1B  
RS1D  
RS1G  
RS1J  
RS1K  
UNIT  
Maximum instantaneous  
forward voltage  
1.0 A  
VF  
1.3  
V
TA = 25 °C  
5.0  
50  
Maximum DC reverse current at  
rated DC blocking voltage  
IR  
μA  
TA = 125 °C  
IF = 0.5 A, IR = 1.0 A,  
Maximum reverse recovery time  
Typical junction capacitance  
trr  
150  
10  
250  
500  
ns  
Irr = 0.25 A  
4.0 V, 1 MHz  
CJ  
7.0  
pF  
Revision: 23-Feb-16  
Document Number: 89402  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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