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RS1GTR PDF预览

RS1GTR

更新时间: 2024-11-14 22:57:59
品牌 Logo 应用领域
其他 - ETC 瞄准线光电二极管
页数 文件大小 规格书
4页 311K
描述
DIODE GEN PURP 400V 1A SMA

RS1GTR 数据手册

 浏览型号RS1GTR的Datasheet PDF文件第2页浏览型号RS1GTR的Datasheet PDF文件第3页浏览型号RS1GTR的Datasheet PDF文件第4页 
RS1A-RS1M  
Technical Data  
Data Sheet N0988, Rev. B  
RS1A-RS1M SURFACE  
MOUNT SUPER FAST RECTIFIER  
Features  
Fast switching for high efficiency  
Low Power Loss,High Efficiency  
High current capability  
Low reverse leakage  
For Use in Low Voltage Application  
Plastic Case Material has UL Flammability Classication  
Rating 94V-0  
This is a Pb − Free Device  
All SMC parts are traceable to the wafer lot  
Additional testing can be offered upon request  
SMA  
Circuit Diagram  
Mechanical Data  
Case: SMA molded plastic body  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: 0.06 grams  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Type Number  
Symbol RS1A RS1B RS1D RS1G RS1J RS1K RS1M Units  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VDC  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800 1000  
560 700  
V
RMS Reverse Voltage  
VRMS  
IO  
280  
1.0  
V
A
Average forward rectified output current  
@TL= 100°C  
Total Device Dissipation  
Derate above 25°C  
1.25  
10  
W
mW/°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
VF  
1.3  
V
Forward Voltage  
@IF =1.0A  
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 125°C  
@TA = 25°C  
5.0  
200  
IRM  
µA  
Trr  
CJ  
150  
250  
500  
ns  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
7
pF  
Typical Thermal Resistance Junction to  
Ambient (Note 3)  
RθJA  
RθJL  
100  
32  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A  
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.1"*0.15" copper pad.  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   

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